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Advance Technical Information
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFC52N30P
VDSS ID25
RDS(on)
= 300 V = 32 A = 75 m
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
Maximum Ratings 300 300 20 30 32 150 52 30 1.0 10 100 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ N/lb
ISOPLUS220TM (IXFC) E153432
G D S D = Drain TAB = Drain
G = Gate S = Source
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force
300 2500 11..65/2.5..15
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF)
Weight ISOPLUS220 Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
2.0 g Characteristic Values Min. Typ. Max. 300 2.5 5.0 100 25 250 65 75 V V nA A A m
Advantages Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2003 IXYS All rights reserved
DS99115A(04/05)
IXFC 52N30P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 20 30 3490 VGS = 0 V, VDS = 25 V, f = 1 MHz 550 130 24 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 (External) 22 60 20 110 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 53 1.25 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS220 Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD Trr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 32 150 1.5 A A V ns C
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A -di/dt = 100 A/s VR = 100V 250 1.0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXFC 52N30P
Fig. 1. Output Characteristics @ 25 Deg. C
55 50 45 40 7V VGS = 10V 8V 150 VGS = 10V 9V 125
Fig. 2. Extended Output Characteristics @ 25 deg. C
I D - Amperes
30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5V 6V
I D - Amperes
35
100
8V
75
7V
50 6V
25
0 0 5 10
5V 15 20 25
V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C
55 50 45 40 VGS = 10V 8V 7V 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 VGS = 10V
V D S - Volts
Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature
35 30 25 20 15 10 5 0 5V 6V
R D S (on) - Normalized
I D - Amperes
I D = 52A I D = 26A
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID
3.8 3.4 VGS = 10V 50 60
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S (on) - Normalized
3 2.6 2.2 1.8 1.4 1 0.6 0 25 50 75 100 125 150 TJ = 25C 10 TJ = 125C
I D - Amperes
40
30
20
0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
(c) 2003 IXYS All rights reserved
TC - Degrees Centigrade
IXFC 52N30P
Fig. 7. Input Adm ittance
100 90 80 50 TJ = -40C 25C 125C 60
Fig. 8. Transconductance
I D - Amperes
60 50 40 30 20 10 0 4 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125C 25C -40C
g f s - Siemens
70
40
30
20
10
0 0 10 20 30 40 50 60 70 80 90 100
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
150 10 9 125 8 7 VDS = 150V I D = 26A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
100
VG S - Volts
TJ = 125C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4
6 5 4 3 2 1
75
50
25
0
0 0 20 40 60 80 100 120
V S D - Volts Fig. 11. Capacitance
10000 f = 1MHz C iss R DS(on) Limit 1000
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
TC = 25C TJ = 15 0C
Capacitance - pF
I D - Amperes
100 25s 1ms 10 DC 10ms 100ms
1000 C oss
C rss 100 0 5 10 15 20 25 30 35 40 1 10 100 1000
V limits, test conditions, and dimensions. IXYS reserves the right to change D S - Volts
V D S - Volts
IXFC 52N30P
Fig. 6. Drain Current vs. Case Tem perature
27 24 21 R DS(on) Limit 1000 TC = 25C TJ =15 0C
Fig. 12. Forw ard-Bias Safe Operating Area
I D - Amperes
18 15 12 9 6 3
I D - Amperes
100 25s 1ms 10 10ms 100ms DC
0 -50 -25 0 25 50 75 100 125 150
1 10 100 1000
TC - Degrees Centigrade
V D S - Volts
Fig. 13. Maxim um Transient Therm al Resistance
10.00
R (th) J C - (C/W)
1.00
0.10
0.01 0.1 1 10 100 1000
Pulse Width - milliseconds
(c) 2003 IXYS All rights reserved

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