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PD-96899
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072 IRHYS593Z30CM 300K Rads (Si) 0.072 ID -20A* -20A*
IRHYS597Z30CM 30V, P-CHANNEL
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TECHNOLOGY
Low-Ohmic TO-257AA
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ V GS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page -20* -18 -80 75 0.6 20 200 -20 7.5 -1.84 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10s) 4.3 ( Typical )
g
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12/21/04
IRHYS597Z30CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-30 -- -- -2.0 12 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.03 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.072 -4.0 -- -10 -25 -100 100 45 20 13 25 100 50 70 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -18A A VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -18A A VDS= -24V ,VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -20A VDS = -15V VDD = -15V, ID = -20A VGS = -12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
1590 934 114 6.5
-- -- -- --
pF
Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = - 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -20* -80 -5.0 75 125
Test Conditions
A
V ns nC Tj = 25C, IS = -20A, VGS = 0V A Tj = 25C, IF =-20A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHYS597Z30CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source On-State A Resistance(Low-OhmicTO-257AA) Diode Forward Voltage A 100K Rads(Si)1 Min Max -30 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.072 0.072 -5.0 300KRads(Si)2 Min Max -30 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.072 0.072 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA V GS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -24V, VGS =0V VGS = -12V, ID = -18A VGS = -12V, ID = -18A VGS = 0V, IS = -20A
1. Part number IRHYS597Z30CM 2. Part number IRHYS593Z30CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.5 59.7 81.4 Energy (MeV) 278.5 320 332 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36 - 30 - 30 - 30 - 30 - 30 31 - 30 - 30 - 30 - 30 - 25 27 - 30 - 30 - 30 - 25 --
-35 -30 -25 -20 -15 -10 -5 0 0 5 10 VGS 15 20
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
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IRHYS597Z30CM
Pre-Irradiation
100
-I D, Drain-to-Source Current (A)
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
100
-I D, Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
10 -5.0V
10
-5.0V
60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100 TJ = 150C T J = 25C 10
1.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -20A
-I D, Drain-to-Source Current (A)
1.0
VDS = -15V 15 60s PULSE WIDTH 1 5 5.5 6 6.5 7 7.5 8 8.5 9 -VGS, Gate-to-Source Voltage (V)
VGS = -12V
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHYS597Z30CM
3000
2500
-VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = -20A 16 VDS= -24V VDS= -15V
C, Capacitance (pF)
2000
Ciss
1500
12
Coss
8
1000
500
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 5 10 15 20 25 30 35 40 45 50 QG, Total Gate Charge (nC)
Crss
0 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100 T J = 150C T J = 25C
1000
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 100
10
100s
10 Tc = 25C Tj = 150C Single Pulse 1 10 -V DS , Drain-to-Source Voltage (V)
1
1ms 10ms
VGS = 0V 0.1 0 1 2 3 4 5 6 -V SD , Source-to-Drain Voltage (V)
1
100
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHYS597Z30CM
Pre-Irradiation
32
LIMITED BY PACKAGE
28
V DS V GS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
-ID , Drain Current (A)
20 16 12
Fig 10a. Switching Time Test Circuit
8 4 0
td(on) tr t d(off) tf
VGS 10%
25
50
75
100
125
150
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
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Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
24
V DD
Pre-Irradiation
IRHYS597Z30CM
VDS
L
500
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
EAS , Single Pulse Avalanche Energy (mJ)
400
VGS -20V
ID TOP -8.9A -12.6A BOTTOM -20A
tp
0.01
300
15V
200
100
Fig 12a. Unclamped Inductive Test Circuit
I AS
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
-12 V
-12V 12V
.2F .3F
QGS
QGD
VDS
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IRHYS597Z30CM
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L=1.0mH Peak IL =- 20A, VGS = -12V A ISD -20A, di/dt -180A/s, VDD -30V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527] 1 2 3
16.89 [.665] 16.39 [.645]
10.92 [.430] 10.42 [.410]
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100] 2X
3X O
0.88 [.035] 0.64 [.025] CA B
3.05 [.120]
O 0.50 [.020]
NOT ES : 1. 2. 3. 4.
DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. T O-257AA TABLES S IS A MODIFIED JE DEC OUTLINE T O-257AA.
LEAD ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2004
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