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PD - 9.1040
IRGPC30FD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Fast CoPack IGBT
VCES = 600V VCE(sat) 2.1V
G
@VGE = 15V, IC = 17A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 31 17 120 120 12 120 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- -- --
Typ.
-- -- 0.24 -- 6 (0.21)
Max.
1.2 2.5 -- 40 --
Units
C/W
g (oz)
Revision 1
C-109
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IRGPC30FD2
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, IC = 250A -- 0.69 -- V/C VGE = 0V, IC = 1.0mA -- 1.8 2.1 IC = 17A VGE = 15V -- 2.4 -- V IC = 31A See Fig. 2, 5 -- 2.2 -- IC = 17A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 6.1 10 -- S VCE = 100V, IC = 17A -- -- 250 A VGE = 0V, VCE = 600V -- -- 2500 VGE = 0V, VCE = 600V, T J = 150C -- 1.4 1.7 V IC = 12A See Fig. 13 -- 1.3 1.6 IC = 12A, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 27 4.1 12 72 75 300 220 0.9 2.1 3.0 70 75 420 480 4.7 13 670 100 10 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 30 IC = 17A 5.9 nC VCC = 400V 15 See Fig. 8 -- TJ = 25C -- ns IC = 17A, VCC = 480V 450 VGE = 15V, RG = 23 350 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 4.6 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 17A, VCC = 480V -- VGE = 15V, RG = 23 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 IF = 12A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 V R = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot.
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10H, RG= 23, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%.
C-110
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IRGPC30FD2
20
Du ty c ycle: 5 0 % TJ = 1 2 5 C T s in k = 9 0 C Ga te d rive as sp e cified Tu rn -on lo sses in clud e effe cts o f re verse rec ove ry Po we r D issipatio n = 2 4W
16
Load Current (A)
12
6 0 % o f ra te d v o lta g e
8
4
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
10 00
I C , C ollector-to-E mitter C urrent (A )
IC , Collector-to-E m itter C urrent (A)
TJ = 25 C
100
1 00
T J = 15 0C
10
TJ = 15 0C
T J = 25 C
1
10
1 1
V G E = 1 5V 2 0 s P U LS E W IDTH
10
0.1 5 10
V C C = 1 00 V 5 s P U L S E W ID TH
15 20
V C E , C ollector-to-E m itter V oltage (V )
V G E , G ate-to-E m itter V olta g e (V )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-111
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IRGPC30FD2
40
V G E = 15 V
3.5
V G E = 15 V 8 0 s P U LS E W IDTH I C = 3 4A
V C E , C ollec to r-to -E m itter V oltage (V )
M axim um D C C ollector C urrent (A)
3.0
30
2.5
20
I C = 1 7A
2.0
10
1.5
I C = 8.5 A
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (C )
T C , C a s e Te m p e ra ture (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T he rm al R e sp ons e (Z thJ C )
1
D = 0 .5 0
0 .2 0 0 .1 0
PD M
0.1
0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E )
t
1
t
2
N o te s : 1 . D u ty fa c to r D = t
1
/t
2
0.01 0.00001
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.00 1
0.01
0.1
1
10
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-112
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IRGPC30FD2
1 4 00
C , C a pac itanc e (pF )
1 0 00
Cies
8 00
Coes
6 00
V G E , G ate-to-E m itter V oltage (V)
1 2 00
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
V C E = 40 0 V I C = 1 7A
16
12
8
4 00
Cres
2 00
4
0 1 10 10 0
0 0 5 10 15 20 25 30
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
Q g , Total G ate C harge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
3.10
Total Switching Losses (mJ)
3.06
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 17A
100
RG = 23 V GE = 15V V CC = 480V I C = 34A
10
I C = 17A I C = 8.5A
1
3.02
2.98
2.94 0 10 20 30 40 50
A
60
0.1 -60
A
-40 -20 0 20 40 60 80 100 120 140 160
RG , Gate Resistance ()
TC , Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-113
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IRGPC30FD2
12
9
I C , C o lle cto r-to -E m itte r C u rre n t (A )
Total Switching Losses (mJ)
RG TC V CC V GE
= 23 = 150C = 480V = 15V
1000
VG E E 20 V G= T J = 125 C
100
S A FE O P E RA TIN G A RE A
6
10
3
0 0 10 20 30
A
40
1 1 10 100 1000
IC , Collector-to-Emitter Current (A)
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C
10
TJ = 125C TJ = 25C
1 0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-114
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IRGPC30FD2
160 100
VR = 200V TJ = 125C TJ = 25C
120
VR = 200V TJ = 125C TJ = 25C
IF = 24A I F = 12A
80
I IRRM - (A)
I F = 24A
10
t rr - (ns)
I F = 12A IF = 6.0A
IF = 6.0A
40
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. di/dt f
Fig. 15 - Typical Recovery Current vs. di/dt f
600
10000
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
400
di(rec)M/dt - (A/s)
1000
Q RR - (nC)
IF = 6.0A
I F = 24A I F = 12A
IF = 12A
100
200
IF = 6.0A
IF = 24A
0 100
di f /dt - (A/s)
1000
10 100
1000
di f /dt - (A/s)
Fig. 16 - Typical Stored Charge vs. di/dt f C-115
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRGPC30FD2
90% Vge +Vge
Same type device as D.U.T.
Vce
Ic 80% of Vce 430F D.U.T.
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr Ic
GATE VOLTAGE D.U.T. 10% +Vg +Vg
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Refer to Section D for the following Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
C-116
Section D - page D-13
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