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PD-9.1544
PROVISIONAL
IRGBC20SD2
Standard Speed CoPack
C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Switching-loss rating includes all 'tail' losses * HEXFREDTM soft ultrafast diodes * Optimized for line frequency operation (to 400HZ)
VCES = 600V
G E
VCE(SAT) 2.4V
@VGE = 15V, IC = 10A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well-known IGBT line. They provide the convenience of an IBGT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, highcurrent, motor control, UPS and power supply applications.
n - ch a n n e l
TO-220AB
Absolute Maximum Ratings
Parameter
VCES I C @ TC = 25C I C @ TC = 100C I CM I LM I F @ TC = 100C I FM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 19 10 76 38 7.0 32 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-------------------------
Typ.
----------0.50 ----2 (0.07)
Max.
2.1 3.5 -----80 ------
Units
C/W
g (oz)
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Revision 0:9/04/96
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IRGBC20SD2
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Min. 600 V(BR)CES /TJ ------VCE(on) ------Gate Threshold Voltage 3.0 VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance 2.0 gfe Zero Gate Voltage Collector Current ---ICES ---Diode Forward Voltage Drop ---VFM ---Gate-to-Emitter Leakage Current ---IGES V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Typ. ---0.75 1.8 2.4 1.9 ----11 5.8 ------1.4 1.3 ---Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, IC = 1.0mA 2.4 IC = 10A VGE = 15V ---V IC = 19A ---IC = 10A, TJ = 150C 5.5 VCE = VGE , IC = 250A ---- mV/C VCE = VGE , IC = 250A ---S VCE = 100V, IC = 10A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, T J = 150C 1.7 V IC = 8.0A 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc t d(on) tr t d(off) tf Eon Eoff Ets t d(on) tr t d(off) tf Ets LE Cies Coes Cres t rr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 1.6 2.3 7.0 72 69 820 910 0.70 3.9 4.6 78 90 1100 1800 7.0 7.5 360 36 5.2 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 2.6 IC = 10A 4.0 nC VCC = 400V 12 ---TJ = 25C ---ns IC = 10A, VCC = 480V ---VGE = 15V, RG = 5.0 ---Energy losses include "tail" and ---diode reverse recovery. ---mJ ------TJ = 150C, ---ns ---VGE = 15V, RG = 50 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V --- = 1.0MHz 55 ns TJ = 25C IF = 8.0A 90 TJ = 125C 5.0 A TJ = 25C VR = 200V 8.0 TJ = 125C 138 nC TJ = 25C 360 TJ = 125C di/dt 200A/s ---- A/s TJ = 25C ---TJ = 125C
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IRGBC20SD2
80
F or b ot h:
T ria n g ula r w a v e :
60
D u t y c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a t e d riv e a s s p e c ifie d
P o w e r D is s ipa t io n = 4 0W C la m p v o lta g e: 8 0 % o f ra te d
Load Current (A)
S q u a re w a v e : 40 6 0 % o f ra te d v olt ag e
20
Id ea l diod es
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
100
TJ = 25C T J = 150C
TJ = 150C
T J = 25C
10
10
1 0.1 1
V G E = 15V 20s PULSE WIDTH
10
A
V C C = 10V 5s PULSE WIDTH
1 4 6 8 10
A
12
V C E , Collector-to-Emitter Voltage (V)
VG E , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGBC20SD2
40 2.5
V G E = 15V
V C E , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
V G E = 15V 80s PULSE WIDTH I C = 40A
30
2.0
20
I C = 20A
1.5
10
I C = 10A
0 25 50 75 100 125
A
150
1.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
T C , Case Temperature (C)
T J , Junction Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
1
D = 0.50
0.20
0 .1
0.10 0.05 S ING LE PULS E (T HERMA L RE SPO NS E)
N otes : 1 . D uty fac tor D = t 1 /t 2 PD M
t
1 t2
0.02 0.01
0.01 0.0000 1
2 . P ea k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.0 1
0.1
1
10
t 1 , R e ct an gu la r P ulse D ura tion (s ec )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
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IRGBC20SD2
4000 20
3000
C ie s
2000
C oe s
V G E , G a te-to -E m itter V oltage (V )
V G E = 0 V, f = 1M H z C ie s = C ge + C gc , C c e SH O RTE D C r es = C gc C o es = C c e + C gc
V CE = 40 0V I C = 20A
16
C , C apac itan ce ( pF )
12
8
1000
C re s
4
0 1 10
A
100
0 0 20 40 60 80 100
A
120
V C E , C ollecto r-to-E m itte r V olta ge (V )
Q g , T otal G at e C ha rge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1.8
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VC C VGE TC IC
= 480V = 15V = 25C = 20A
10
R G = 10 V G E = 15V V C C = 480V I C = 40A
1.6
I C = 20A
1
1.4
I C = 10A
1.2
1.0 0 10 20 30 40 50
A
60
0.1 -60 -40 -20 0 20 40 60 80
A 100 120 140 160
R G , Gate Resistance ( )
TJ , Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRGBC20SD2
5.0
Total Switching Losses (mJ)
4.0
RG TC V CC V GE
= 10 = 150C = 480V = 15V
1000
VG E E 20V G= T J = 1 25C
100
3.0
S AFE O P ER ATIN G AR EA
2.0
10
1.0
0.0 0 10 20 30 40 50
A
1 1 10 100 1000
I C , Collector-to-Emitter Current (A)
V C E , C olle cto r-to-E m itte r V o lta g e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Inst antan eous F orw ard C urrent - I F (A )
10
TJ = 15 0C TJ = 12 5C TJ = 2 5C
1 0.8 1.2 1.6 2.0 2.4
F orwa rd V olta ge D rop - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRGBC20SD2
100 100
V R= 200V T J = 125C T J = 25C
80
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
I F = 30A I F = 30A
60
I IR R M - (A )
t rr - (ns)
10
IF = 15 A
I F = 15A
40
I F = 5 .0A I F = 5.0A
20 100
di f /dt - (A/s)
1000
1 100
1000
di f /dt - (A / s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
800
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
600
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
I F = 3 0A
di(re c)M /dt - (A / s)
Q R R - (nC )
400
I F = 5 .0 A I F = 1 5A I F = 3 0A
I F = 15A IF = 5.0A
200
0 100
di f /d t - (A /s )
1000
100 100
1000
d i f /dt - (A /s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M /dt vs. dif/dt
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IRGBC20SD2
90% Vge + Vg e
Same t ype device as D.U.T.
V ce
Ic 80% of Vce 430F D.U.T.
10 % Vc e Ic
90% Ic 5% Ic
td (off)
tf t1 +5 S V ce ic d t t1
E off =
Fig. 18a - Test Circuit for Measurement of ILM, Eon , Eoff(diode), t rr, Qrr, Irr, t d(on), t r, t d(off), t f
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G ATE VO LTA G E D .U .T. 1 0% +V g +V g
trr Ic
Q rr =
trr id dt tx
tx 10% V cc V ce Vcc 10% Ic 9 0% Ic DUT V O LTA G E AN D C URR E NT Ipk Ic
10 % Ir r V cc
V pk Irr
td( on)
tr
5% Vc e t2 E on = V c e ie dt t1 t2 DIO D E RE V E RS E RE C O V ER Y EN ER G Y t3
DIO DE RE CO V E RY W AV E FO RM S
Er ec =
t4 V d id d t t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon , td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Q rr, Irr
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IRGBC20SD2
V g G ATE S IG N AL DE VICE UNDE R TE S T CURR EN T D .U .T.
VO L TA G E IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 10 00V 50V 60 00 F 100 V V c*
D.U.T.
RL = 0 - 480V
480V 4 X I C @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRGBC20SD2
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature VCC=80%(V CES), VGE =20V, L=10H, RG= 50 Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
Notes:
Case Outline TO-247AC
3.65 (.143) 3.55 (.140) 0.25 (.010) M -A 5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C-D NOTES: 1 D IMENSIONS & TOLERANCIN G PER ANSI Y14.5M, 1982. 2 C ONTR OLLIN G D IM ENSION : INCH . 3 D IMENSIONS AR E SHOW N M ILLIM ETERS (INCH ES). 4 C ONFORM S T O JED EC OU TLIN E T O-247AC .
15.90 (.626) 15.30 (.602) - B-
DBM
5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
2X
5.50 (.217) 4.50 (.177)
LEAD ASSIGN MENT S 1 - GATE 2 - C OLLEC TOR 3 - EMITT ER 4 - C OLLEC TOR LONGER LEAD ED (20m m) VER SION AVAILABLE (TO-247AD) TO OR DER ADD "-E" SUF FIX TO PART NUM BER
*
14.80 (.583) 14.20 (.559)
4.30 (.170) 3.70 (.145)
*
3X C AS 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087)
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
3X
1.40 (.056) 1.00 (.039) 0.25 (.010) M
3.40 (.133) 3.00 (.118)
C O NFO RM S TO J ED EC O UTLINE TO -247 AC (TO -3P )
D im en sion s in M illim ete rs a nd (Inc he s)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96
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