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| Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) 3.0V @VGE = 15V, I C = 22A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 500 40 22 80 80 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.50 -- 2.0 (0.07) Max. 0.77 -- 80 -- Units C/W g (oz) Revision 0 C-587 To Order Previous Datasheet Index Next Data Sheet IRGB440U Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 500 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.35 -- V/C VGE = 0V, I C = 1.0mA -- 2.4 3.0 IC = 22A V GE = 15V -- 2.8 -- V IC = 40A See Fig. 2, 5 -- 2.4 -- IC = 22A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 6.6 13 -- S VCE = 100V, I C = 22A -- -- 250 A VGE = 0V, V CE = 500V -- -- 1000 VGE = 0V, V CE = 500V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 55 11 19 27 13 100 56 0.37 0.18 0.55 27 15 137 100 0.96 7.5 1400 250 42 Max. Units Conditions 83 IC = 22A 17 nC VCC = 400V See Fig. 8 29 VGE = 15V -- TJ = 25C -- ns IC = 22A, V CC = 400V 150 VGE = 15V, R G = 10 100 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 0.70 -- TJ = 150C, -- ns IC = 22A, V CC = 400V -- VGE = 15V, R G = 10 -- Energy losses include "tail" -- mJ See Fig. 10, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 10, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-588 To Order Previous Datasheet Index Next Data Sheet IRGB440U 50 Fo r bo th: Triangular w ave: 40 LO A D C U R R E N T (A ) D uty c yc le: 50% T J = 125 C T s in k = 90C G ate d riv e as s pec ified P ow er D issipation = 28W S quare w ave: 60% of rated voltage C lam p v oltage: 80 % of rated 30 20 10 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 1000 IC , C o llector-to-E m itte r C urren t (A ) I C , C ollector-to-E mitter C urrent (A ) 100 TJ = 2 5C TJ = 1 50 C 100 T J = 15 0C T J = 2 5C 10 10 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 1 5 10 V C C = 1 00 V 5 s P U L S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-589 To Order Previous Datasheet Index Next Data Sheet IRGB440U 40 V G E = 15 V 3.5 V G E = 15 V 80 s P U L S E W ID TH I C = 4 4A V C E , C ollector-to-E mitter V oltage (V ) Maxim um D C Collector C urrent (A ) 30 3.0 20 2.5 I C = 2 2A 10 2.0 I C = 1 1A 0 25 50 75 100 125 150 1.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T herm al Response (Z thJC ) D = 0.50 0.2 0 0.1 0.10 PD M 0.0 5 t 0 .0 2 0 .0 1 S ING L E PU LS E (T HE R MA L R ES PO N S E) 1 t 2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-590 To Order Previous Datasheet Index Next Data Sheet IRGB440U 250 0 200 0 C, C apacitance (pF) Cies 150 0 Coes 100 0 V G E , G ate-to-E m itter V oltage (V ) 1 00 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 00 V I C = 2 2A 16 12 8 500 Cres 4 0 0 1 10 0 20 40 60 V C E , C o llector-to-Em itter V oltage (V) Q G , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 .9 Total S w itching Losses (m J) T o tal S w itc hing Los se s (m J) VC C VG E TC IC = 4 00 V = 15 V = 25 C = 2 2A 10 R G = 10 V GE = 15 V V CC = 4 00 V I C = 44 A 0 .8 0 .7 1 I C = 22 A I C = 1 1A 0 .6 0 .5 0 20 40 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R es istance ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-591 To Order Previous Datasheet Index Next Data Sheet IRGB440U 3.0 I , C o llec to r-to -E m itter C u rre nt (A ) T o ta l S w itc hin g L o s s e s (m J ) RG TC VCC VGE = 10 = 1 50C = 40 0V = 1 5V 1000 VG E E 20 V G= T J = 12 5C 2.0 100 S A FE O P E R A TING A R E A 1.0 10 C 1 1 0.0 0 10 20 30 40 50 10 1 00 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o llec to r-to -E m itte r V o lta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix A: Section D - page D-3 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220 AB Section D - page D-12 C-592 To Order |
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