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IRG4RC10SD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Extremely low voltage drop 1.1V(typ) @ 2A * S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. * Tight parameter distribution * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-252AA package
C
Standard Speed CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
n-ch an nel
Benefits
* Generation 4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing * Lower losses than MOSFET's conduction and Diode losses
D-PAK TO-252AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
600 14 8.0 18 18 4.0 16 20 38 15 -55 to +150
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient (PCB mount)* Weight
Typ.
--- --- --- 0.3 (0.01)
Max.
3.3 7.0 50 ---
Units
C/W g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994
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IRG4RC10SD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 -- Temperature Coeff. of Breakdown Voltage -- 0.64 Collector-to-Emitter Saturation Voltage -- 1.58 -- 2.05 -- 1.68 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -9.5 Forward TransconductanceT 3.65 5.48 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 1.5 -- 1.4 Gate-to-Emitter Leakage Current -- --
Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 1.7 IC = 8.0A VGE = 15V -- V IC = 14.0A See Fig. 2, 5 -- IC = 8.0A, TJ = 150C 6.0 VCE = V GE, IC = 250A -- mV/C VCE = V GE, IC = 250A -- S VCE = 100V, IC =8.0A 250 A VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150C 1.8 V IC =4.0A See Fig. 13 1.7 IC =4.0A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units 15 22 2.42 3.6 6.53 9.8 76 -- 32 -- 815 1200 720 1080 0.31 -- 3.28 -- 3.60 10.9 1.46 2.6 70 -- 36 -- 890 -- 890 -- 3.83 -- 7.5 -- 280 -- 30 -- 4.0 -- 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 -- 235 -- Conditions IC = 8.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25C IC = 8.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 18 IC = 5.0A TJ = 150C, See Fig. 10,11, 18 IC = 8.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 = 1.0MHz TJ = 25C See Fig. TJ = 125C 14 IF =4.0A TJ = 25C See Fig. TJ = 125C 15 VR = 200V TJ = 25C See Fig. TJ = 125C 16 di/dt = 200A/s TJ = 25C See Fig. TJ = 125C 17
nC
ns
mJ mJ ns
mJ nH pF ns A nC A/s
Details of note Q through T are on the last page
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IRG4RC10SD
2.50
F o r b o th :
2.00
LOAD CURRENT (A)
D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C PCB Mount, Ta = 55C G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 1.4 W
1.50
S q u a re w a v e : 6 0 % o f ra te d v o lta g e
1.00
I
0.50
Id e a l d io d e s
0.00 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 25 C T = 150 C J
I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)
10
10
TJ = 150 C
TJ = 25 C V = 50V 5s PULSE WIDTH
CC 5s PULSE WIDTH 10 6 8 12
1 0.5
V = 15V 80s PULSE WIDTH
GE 1.0 1.5 2.0 2.5 3.0
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4RC10SD
16 3.00
VCE , Collector-to-Emitter Voltage(V)
V = 15V 80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
I C = 16 A
12
2.50
8
2.00
IC = 8 A
4
1.50
IC = 4 A
0 25 50 75 100 125 150
1.00 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.02 0.01
0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4RC10SD
500
400
C, Capacitance (pF)
Cies
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 8A
15
300
C oes
200
10
100
C res
5
0 1 10 100
0 0 5 10 15 20
VCE , Collector-to-Emitter Voltage (V)
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
3.60
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C 3.55 I C = 8A
3.50
100
RG =100 Ohm VGE = 15V VCC = 480V
IC = 16 A
10
IC = 8 A IC = 4 A
1
3.45
3.40
3.35
3.30 0 20 40 60 80 100
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG G Gate Resistance (Ohm) R , , Gate Resistance ()
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4RC10SD
15
Total Switching Losses (mJ)
9
I C , Collector Current (A)
8 12 16 20
RG TJ VCC 12 VGE
= 100 100 = 150 C = 480V = 15V
100
VGE = 20V T J = 125 oC
10
6
3
0 0 4
SAFE OPERATING AREA
1 1 10 100 1000
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
10
TJ = 150C TJ = 125C T = 25C
J
1
0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0
F orward Voltage Drop V F ( ) (V Forward V oltage D rop -- V FMM V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4RC10SD
50 14 VR = 20 0V T J = 1 25 C T J = 2 5C 45
I F = 8.0A I F = 4.0A
12
I F = 8.0A
10
40
I F = 4.0A
trr- (nC)
Irr- ( A)
8
35
6 30 4
25 VR = 2 00 V T J = 1 2 5C T J = 2 5 C 20 100 1000 2
di f /dt - (A/ s)
0 100
1000
di f /dt - (A/ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200 VR = 2 00 V T J = 1 25C T J = 2 5C 160
Fig. 15 - Typical Recovery Current vs. dif/dt
1000 VR = 20 0V T J = 1 25 C T J = 2 5C
I F = 8.0A
I F = 8.0A
di (rec) M/dt- (A /s)
120
I F = 4.0A
I F = 4.0A
Qrr- (nC)
80 40
0 100
di f /dt - (A/ s)
1000
100 100
A 1000
di f /dt - (A/ s )
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
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IRG4RC10SD
Same ty pe device as D .U.T.
80% of Vce
430F D .U .T.
Vge VC 90% 10% 90%
t d(off)
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
10% IC 5% t d(on)
tr Eon E ts = (Eon +Eoff )
tf t=5s Eoff
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
Ic dt
trr id d t tx V cc
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
Vd Ic dt
t4 V d id d t t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4RC10SD
V g G AT E SIG NA L DE VIC E U ND E R T E ST CU R RE NT D .U .T.
VO L TA G E IN D.U .T.
CU R RE NT IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000 F 100 V Vc* D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
Package Outline
TO-252AA Outline Dimensions are shown in millimeters (inches)
6.7 3 (.2 65 ) 6.3 5 (.2 50 ) -A5 .46 (.21 5) 5 .21 (.20 5) 4 6.45 (.24 5) 5.68 (.22 4) 6.2 2 (.2 45 ) 5.9 7 (.2 35 ) 1 .0 2 (.04 0) 1 .6 4 (.02 5) 1 2 3 0.51 (.0 2 0) M IN . 10 .42 (.41 0) 9.4 0 (.3 70 ) 1 .2 7 ( .0 50) 0 .8 8 ( .0 35) 2.3 8 (.0 94 ) 2.1 9 (.0 86 ) 1.1 4 ( .0 45) 0.8 9 ( .0 35) 0.58 (.02 3) 0.46 (.01 8)
L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN
LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR
-B 1 .5 2 ( .06 0) 1 .1 5 ( .04 5) 1.1 4 (.0 45) 2 X 0.7 6 (.0 30) 2.28 (.0 90 ) 4.57 ( .18 0) 0.89 (.0 35 ) 3X 0.64 (.0 25 ) 0 .2 5 (.0 10 ) M AMB
0 .5 8 (.0 23) 0 .4 6 (.0 18)
3 - EMITTER 4 - COLLECTOR
N OT E S: 1 D IM EN SIO N IN G & TO L E R AN C IN G PE R A N SI Y 14 .5 M, 19 82. 2 C O N TR O LL ING D IM E N S IO N : IN C H. 3 C O N FO R M S T O JE D E C O U TL IN E TO - 252 A A. 4 D IM EN SIO N S S H OW N A RE B E F O RE S O LD E R D IP , S O L D ER D IP M A X. + 0.16 (.0 06 ).
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IRG4RC10SD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) RVCC=80%(VCES), VGE=20V, L=10H, RG = 100W (figure 19) SPulse width 80s; duty factor 0.1%. TPulse width 5.0s, single shot.
Tape & Reel Information
TO-252AA
TR TRR TR L
1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 )
16 .3 ( .64 1 ) 15 .7 ( .61 9 )
12 .1 ( .4 7 6 ) 11 .9 ( .4 6 9 )
F E E D D IR E C T IO N
8 .1 ( .3 18 ) 7 .9 ( .3 12 )
FE E D D IR E C T IO N
NOTES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R . 2 . A L L D IM EN S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
1 3 IN C H
16 m m NOTES : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00
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