View IRFIB7N50APBF_1255886.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SMPS MOSFET
PD - 94805
IRFIB7N50APBF
HEXFET(R) Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN 1001) Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
VDSS
500V
Rds(on) max
0.52
ID
6.6A
TO-220 FULLP AK
GDS
Max.
6.6 4.2 44 60 0.48 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Applicable Off Line SMPS Topologies: Two Transistor Forward Half & Full Bridge Convertors Power Factor Correction Boost
Notes through are on page 8
www.irf.com
1
10/31/03
IRFIB7N50APBF
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.61 --- V/C Reference to 25C, ID = 1mA --- --- 0.52 VGS = 10V, ID = 4.0A 2.0 --- 4.0 V VDS = VGS, ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 6.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 14 35 32 28 1423 208 8.1 2000 55 97 Max. Units Conditions --- S VDS = 50V, ID = 6.6A 52 ID = 11A 13 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 11A ns --- R G = 9.1 --- R D = 22,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
275 11 6.0
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- --- Min. Typ. Max. Units
Max.
2.1 65
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol --- --- 6.6 showing the A G integral reverse 44 --- --- S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 11A, VGS = 0V --- 510 770 ns TJ = 25C, IF = 11A --- 3.4 5.1 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFIB7N50APBF
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
4.5V 20s PULSE WIDTH TJ = 25 C
1 10 100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
0.1 0.1
1
4.5V
1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 11A
I D , Drain-to-Source Current (A)
2.5
10
2.0
TJ = 150 C
1.5
1
TJ = 25 C
1.0
0.5
0.1 4.0
V DS = 100V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFIB7N50APBF
2400
2000
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
1600
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
ID = 11A 6.6A VDS = 400V VDS = 250V VDS = 100V
16
Coss
1200
12
8
800
Crss
400
4
0 1 10 100 1000
A
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
I D , Drain Current (A)
100 10us 10 100us 1ms 1 10ms
TJ = 150 C
1
TJ = 25 C
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFIB7N50APBF
7.0 6.0
VDS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
5.0 4.0 3.0 2.0 1.0 0.0
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFIB7N50APBF
EAS , Single Pulse Avalanche Energy (mJ)
15V
600
TOP
500
VDS
L
DRIVER
BOTTOM
ID 4.9A 7.0A 11A
400
RG
20V
D.U.T
IAS tp
+ V - DD
A
300
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS
QGD
V DSav , Avalanche Voltage (V)
660
VG
640
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
620
50K 12V .2F .3F
600
D.U.T. VGS
3mA
+ V - DS
580 0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
A
I av , Avalanche Current (A)
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
www.irf.com
IRFIB7N50APBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+ +
-
RG
* * * *
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRFIB7N50APBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
EXAM PLE: TH IS IS AN IRFI84 0G W ITH A SSEM B LY LO T C O DE 3 43 2 ASSEM BLED O N W W 24 1999 IN TH E ASSEM BLY LIN E "K" PART N U M BER IN TERN ATIO N AL RECTIFIER LO G O ASSEM BLY LO T C O D E
IRFI840G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D ATE CO D E YEAR 9 = 1999 WEEK 24 LIN E K
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 4.5mH RG = 25, IAS = 11A. (See Figure 12) ISD 11A, di/dt 140A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Uses IRFB11N50A data and test conditions t=60s,f=60Hz Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/03
8
www.irf.com

▲Up To Search▲

Price & Availability of IRFIB7N50APBF

	To Download IRFIB7N50APBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .