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PD - 96977B
IRF6636
DirectFETTM Power MOSFET
Typical values (unless otherwise specified)
RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 20V max 20V max 3.2m@ 10V 4.6m@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for Control FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques ST
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT
DirectFETTM ISOMETRIC
Description
The IRF6636 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
20
Typical RDS(on) (m)
Max.
20 20 18 15 81 140 28 14
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 10 ID= 14A
A
mJ A
ID = 18A 15 10 5 T J = 25C 0 0 1 2 3 4 5 6 7 8 9 10
VDS= 16V VDS= 10V
T J = 125C
20
30
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Starting TJ = 25C, L = 0.27mH, RG = 25, IAS = 14A. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET MOSFETs Repetitive rating; pulse width limited by max. junction temperature.
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1
06/13/05
IRF6636
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
20 --- --- --- 1.55 --- --- --- --- --- 52 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 15 3.2 4.6 --- -6.4 --- --- --- --- --- 18 5.9 1.9 6.1 4.1 8.0 10 --- 14 19 16 6.2 2420 780 360 --- --- --- 1.5 --- --- --- --- --- --- --- pF VGS = 0V VDS = 10V = 1.0MHz ns nC
Conditions
VGS = 0V, ID = 250A
--- --- 4.5 6.4 2.45 --- 1.0 150 100 -100 --- 27 --- ---
V
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 18A VGS = 4.5V, ID = 14A V mV/C A nA S VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 14A VDS = 10V nC VGS = 4.5V ID = 14A See Fig. 17 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 14A Clamped Inductive Load VDS = VGS, ID = 250A
--- --- --- --- --- --- ---
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 16 7.3 1.0 24 11 V ns nC --- --- 140
Min.
---
Typ. Max. Units
--- 2.8 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 14A, VGS = 0V TJ = 25C, IF = 14A di/dt = 100A/s
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6636
Absolute Maximum Ratings
Parameter
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
Max.
2.2 1.4 42 270 -40 to + 150
Units
W
C
Thermal Resistance
Parameter
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
Typ.
--- 12.5 20 --- 1.0 0.017
Max.
58 --- --- 3.0 ---
Units
C/W
W/C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 4 R5 R5 5
1
Ri (C/W)
0.6677
C C
i (sec)
0.000066 0.000896 0.004386 0.686180
0.1
1.0463 1.5612 29.2822
1
2
3
4
5
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci= i/Ri
25.4550 32 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001 0.01
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes: Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with a thin gap filler and heat sink. (still air)
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Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
3
IRF6636
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10 2.5V 1
2.5V 1 0.1 1
60s PULSE WIDTH
Tj = 25C 10 100 1000
0.1
60s PULSE WIDTH
Tj = 150C 10 100 1000
1
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 10V 60s PULSE WIDTH 100 T J = 150C 10 T J = 25C T J = -40C
Fig 5. Typical Output Characteristics
1.5 ID = 18A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current ()
1.0
1
V GS = 10V V GS = 4.5V 0.5
0.1 1 2 3 4
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 7. Normalized On-Resistance vs. Temperature
50 T J = 25C 40
Typical RDS(on) ( m)
C, Capacitance(pF)
10000
30
Ciss 1000 Coss Crss
Vgs = 3.0V Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
20
10
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0 0 20 40 60 80 100 120 140
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6636
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
1msec 10msec
10
1
T J = 150C T J = 25C T J = -40C
1
0.1
T A = 25C
VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V)
0.01
T J = 150C
Single Pulse 0.01 0.10 1.00 10.00 100.00
Fig 10. Typical Source-Drain Diode Forward Voltage
90
VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50A
VDS, Drain-to-Source Voltage (V)
80 70
ID, Drain Current (A)
60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
120
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
ID 100 80 60 40 20 0 25 50 75 100
TOP
6.4A 9.8A BOTTOM 14A
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF6636
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6636
D.U.T
Driver Gate Drive
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
Reverse Recovery Current
P.W.
Period
D=
P.W. Period VGS=10V
*
+
D.U.T. ISD Waveform Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * *
di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFETTM Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
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7
IRF6636
DirectFETTM Outline Dimension, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.79 G 0.75 0.57 H 0.53 0.30 J 0.26 K O.88 0.98 2.28 L 2.18 0.70 M 0.59 0.08 N 0.03 IMPERIAL MIN 0.187 0.146 0.108 0.014 0.023 0.023 0.030 0.021 0.010 0.035 0.086 0.023 0.001 MAX 0.191 0.156 0.112 0.018 0.024 0.024 0.031 0.022 0.012 0.039 0.090 0.028 0.003
Note: Controlling dimensions are in mm
DirectFETTM Part Marking
8
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IRF6636
DirectFETTM Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6636). For 1000 parts on 7" reel, order IRF6636TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) METRIC METRIC IMPERIAL IMPERIAL MIN MIN MAX CODE MAX MIN MIN MAX MAX 12.992 A 6.9 N.C N.C 330.0 177.77 N.C N.C 0.795 0.75 B N.C N.C 20.2 19.06 N.C N.C 0.504 C 0.53 0.50 12.8 13.5 0.520 12.8 13.2 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 3.937 E 2.31 N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.488 0.47 12.4 11.9 N.C 0.567 12.01 14.4 H 0.469 0.47 11.9 11.9 N.C 0.606 12.01 15.4
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/05
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