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 HMC580ST89 / 580ST89E
v00.1106
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
Features
P1dB Output Power: +22 dBm Gain: 22 dB Output IP3: +37 dBm Cascadable 50 Ohm I/Os Single Supply: +5V Industry Standard SOT89 Package
5
AMPLIFIERS - SMT
Typical Applications
The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver: * Cellular / PCS / 3G * Fixed Wireless & WLAN * CATV, Cable Modem & DBS * Microwave Radio & Test Equipment * IF & RF Applications
Functional Diagram
General Description
The HMC580ST89 & HMC580ST89E are InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 1 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +26 dBm output power. The HMC580ST89(E) offers 22 dB of gain with a +37 dBm output IP3 at 250 MHz, and can operate directly from a +5V supply. The HMC580ST89(E) exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.
Electrical Specifications, Vs= 5.0 V, Rbias= 1.8 Ohm, TA = +25 C
Parameter Gain Gain Variation Over Temperature Input Return Loss DC - 0.25 GHz 0.25 - 0.50 GHz 0.50 - 1.00 GHz DC - 1.0 GHz DC - 0.25 GHz 0.25 - 0.50 GHz 0.50 - 1.00 GHz DC - 0.50 GHz 0.50 - 1.00 GHz DC - 1.0 GHz DC - 0.25 GHz 0.25 - 0.50 GHz 0.50 - 1.00 GHz DC - 0.25 GHz 0.25 - 0.50 GHz 0.50 - 1.00 GHz DC - 1.0 GHz Min. 19 18.5 15 Typ. 22 21 17 0.005 35 28 19 12 11 23 22 20.5 19 37 35 33 2.8 88 Max. Units dB dB dB dB/ C dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dB mA
Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB)
19 17.5 16
Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output.
5 - 572
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC580ST89 / 580ST89E
v00.1106
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
Broadband Gain & Return Loss
25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0 0.5 1
Gain vs. Temperature
24 22 20 18 GAIN (dB)
5
AMPLIFIERS - SMT
5 - 573
RESPONSE (dB)
S21 S11 S22
16 14 12 10 8 6 4 2 0
+25C +85C -40C
1.5
2
2.5
3
0
0.3
0.5
0.8
1
1.3
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 -5 INPUT RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 -45 0 0.3 0.5 0.8 1 1.3 1.5 FREQUENCY (GHz)
+25C +85C -40C
Output Return Loss vs. Temperature
0 OUTPUT RETURN LOSS (dB)
-5
-10
-15
+25C +85C -40C
-20
-25 0 0.3 0.5 0.8 1 1.3 1.5 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 -35 0 0.3 0.5 0.8 1 1.3 1.5 FREQUENCY (GHz)
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB)
+25C +85C -40C
+25C +85C -40C
7 6 5 4 3 2 1 0 0 0.3 0.5 0.8
1
1.3
1.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC580ST89 / 580ST89E
v00.1106
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
5
AMPLIFIERS - SMT
P1dB vs. Temperature
26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 0.3 0.5 0.8
Psat vs. Temperature
28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 0.3 0.5 0.8
P1dB (dBm)
+25C +85C -40C
Psat (dBm)
+25C +85C -40C
1
1.3
1.5
1
1.3
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
45
Gain, Power & OIP3 vs. Supply Voltage for Constant Icc = 88 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 36 32 28 24 20 16 12 8 4 0 4.5
Gain P1dB Psat OIP3
40 OIP3 (dBm)
35
30
+25C +85C -40C
25
20 0 0.3 0.5 0.8 1 1.3 1.5 FREQUENCY (GHz)
5 Vs (Vdc)
5.5
Vcc vs. Icc Over Temperature for Fixed Vs= 5V, RBIAS= 1.8 Ohms
94 +85C 92 90 +25C Icc (mA) 88 86 84 82 -40C 80 78 4.82
ACPR vs. Channel Output Power
-20 -25 -30 ACPR (dBc) -35 -40 -45 -50 -55 -60 -65
WCDMA 140MHz WCDMA 400MHz CDMA2000 140MHz CDMA2000 400MHz
4.83
4.84
4.85
4.86
4.87
2
4
6
8
10
12
14
16
18
Vcc (Vdc)
CHANNEL OUTPUT POWER (dBm)
5 - 574
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC580ST89 / 580ST89E
v00.1106
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +4.2 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 9 mW/C above 85 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +5.5 Vdc +10 dBm 150 C 0.59 W 110 C/W -65 to +150 C -40 to +85 C
5
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number HMC580ST89 HMC580ST89E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1
[1]
Package Marking [3] H580 XXXX H580 XXXX
[2]
[1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 575
AMPLIFIERS - SMT
HMC580ST89 / 580ST89E
v00.1106
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1
IN
This pin is DC coupled. An off chip DC blocking capacitor is required.
3
OUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to RF/DC ground.
Application Circuit
Recommended Bias Resistor Values for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 6V 13 1/4W 8V 36 1/2W
Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies with Vs = +5V
Frequency (MHz) Component 50 L1 C1, C2 Rbias 270 nH 0.01 F 0 Ohms 250 110 nH 820 pF 1.5 Ohms 400 110 nH 820 pF 1.5 Ohms 900 56 nH 100 pF 1.8 Ohms
5 - 576
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC580ST89 / 580ST89E
v00.1106
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
Evaluation PCB
5
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 116402
Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum Resistor, 1206 Pkg. Inductor, 0603 Pkg. HMC580ST89 / HMC580ST89E 107368 Evaluation PCB
[1]
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [3] Evaluation board tuned for 900 MHz operation
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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