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HGTG12N60C3D
Data Sheet December 2001
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49117.
Features
* 24A, 600V at TC = 25oC * Typical Fall Time . . . . . . . . . . . . . . . . 210ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG12N60C3D PACKAGE TO-247 BRAND G12N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
HGTG12N60C3D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG12N60C3D 600 24 12 15 96 20 30 24A at 600V 104 0.83 -40 to 150 260 4 13 UNITS V A A A A V V W W/oC oC oC s s
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES IC = IC110, VGE = 15V IC = 15A, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 15 3.0 VCE(PK) = 480V VCE(PK) = 600V 80 24 TYP 25 1.65 1.85 1.80 2.0 5.0 MAX 250 2.0 2.0 2.2 2.2 2.4 6.0 100 UNITS V V A mA V V V V V nA A A
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA
VGE(TH) IGES SSOA
IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, VGE = 15V, RG = 25, L = 100H IC = IC110, VCE = 0.5 BVCES
Gate to Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON EOFF VEC
IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
-
7.6 48 62 14 16 270 210 380 900 1.7
55 71 400 275 2.0
V nC nC ns ns ns ns J J V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage
TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H
IEC = 12A
-
(c)2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
HGTG12N60C3D
Electrical Specifications
PARAMETER Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL trr RJC TEST CONDITIONS IEC = 12A, dIEC/dt = 100A/s IEC = 1.0A, dIEC/dt = 100A/s Thermal Resistance IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending at the point where the collector current equals zero (ICE = 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. MIN TYP 34 30 MAX 42 37 1.2 1.5 UNITS ns ns
oC/W oC/W
Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s ICE, COLLECTOR TO EMITTER CURRENT (A) 80 70 60 50 40 TC = 25oC 30 20 10 0 4 6 8 10 12 14 VGE, GATE TO EMITTER VOLTAGE (V) TC = -40oC TC = 150oC PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 80 70 60 50 40 30 20 10 0 0 7.0V 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7.5V 10 9.0V 8.5V 8.0V 10.0V VGE= 15.0V 12.0V
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR TO EMITTER CURRENT (A)
80 70 60 50 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V
80 70 60 50 40 30 20 10 0 0
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC
TC = 25oC
TC = -40oC 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TC = 150oC TC = 25oC
TC = 150oC
1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
(c)2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
HGTG12N60C3D Typical Performance Curves
25 ICE , DC COLLECTOR CURRENT (A) VGE = 15V
(Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (s) 20 140 120 ISC 15 100
VCE = 360V, RG = 25, TJ = 125oC
20
15
80 10 60
10
5
tSC 5 10 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V) 11
40 20 15
0 25
50
75 100 125 TC , CASE TEMPERATURE (oC)
150
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
100 td(ON)I , TURN-ON DELAY TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
400 TJ = 150oC, RG = 25, L = 100mH, VCE(PK) = 480V 300 VGE = 15V
50
30
VGE = 10V
VGE = 10V 200
20
VGE = 15V
10 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
100 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
200 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V trI , TURN-ON RISE TIME (ns) 100 tfI , FALL TIME (ns) VGE = 10V
300 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
200 VGE = 10V or 15V
VGE = 15V
10
100 90 80 5 10 15 20 25 30 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
5
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
ISC, PEAK SHORT CIRCUIT CURRENT(A)
HGTG12N60C3D Typical Performance Curves
2.0 EON , TURN-ON ENERGY LOSS (mJ)
(Continued)
3.0 EOFF , TURN-OFF ENERGY LOSS (mJ)
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 2.5 2.0 1.5 VGE = 10V OR 15V 1.0
1.5 VGE = 10V 1.0 VGE = 15V 0.5
0.5 0 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
0 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
200 fMAX , OPERATING FREQUENCY (kHz) 100 VGE = 10V
TJ = 150oC, TC = 75oC RG = 25, L = 100H
100
TJ = 150oC, VGE = 15V, RG = 25, L = 100H
80
VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 1.2oC/W 1 5 10 20 30 ICE, COLLECTOR TO EMITTER CURRENT (A)
60 LIMITED BY CIRCUIT 40
10
20
0
0
100
200
300
400
500
600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500 CIES
FREQUENCY = 1MHz
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
IG(REF) = 1.276mA, RL = 50, TC = 25oC VGE, GATE TO EMITTER VOLTAGE (V) 600 15
C, CAPACITANCE (pF)
2000
480
VCE = 600V
12
1500
360
9
1000
240
VCE = 400V VCE = 200V
6
500 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) COES
120
3
0 0 10 20 30 40 QG , GATE CHARGE (nC) 50 60
0
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
HGTG12N60C3D Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE 100 0.5
(Continued)
0.2 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 PD t2 t1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
50 40 IEC , FORWARD CURRENT (A) tr , RECOVERY TIMES (ns) 40
TC = 25oC, dIEC/dt = 100A/s trr 30 ta 20 tb 10
30
100oC
20
150oC
25oC
10
0 0 0.5 1.0 1.5 2.0 2.5 3.0 VEC , FORWARD VOLTAGE (V)
0 0 5 10 15 20 IEC , FORWARD CURRENT (A)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveform
L = 100H RHRP1560 VGE
90% 10% EOFF EON
RG = 25 +
VCE 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
HGTG12N60C3D Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means, for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener Diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
(c)2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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