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PD-20381
HFA40HF60
HEXFRED
Features
* Reduced RFI and EMI * Reduced Snubbing * Extensive Characterization of Recovery Parameters * Hermetic * Surface Mount
CATHODE ANODE
TM
Ultrafast, Soft Recovery Diode
(ISOLATED BASE)
VR = 600V VF = 1.75V Qrr = 290nC di(rec)M/dt = 400A/s
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
TM
SMD-1
Absolute Maximum Ratings (per Leg)
Parameter
VR IF @ TC = 100C IFSM @ TC = 25C PD @ TC = 25C TJ TSTG D.C. Reverse Voltage Continuous Forward Current Single Pulse Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
600 22 225 83 -55 to +150
Units
V A W C
Thermal - Mechanical Characteristics
Parameter
RJC Junction-to-Case, Single Leg Conducting Weight
Typ.
-- 2.4
Max.
1.5 --
Units
C/W g
Note: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
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6/30/99
HFA40HF60
Electrical Characteristics (per Leg) @ TJ = 25C (unless otherwise specified)
Parameter
VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage
Min. Typ. Max. Units
600 -- -- -- -- -- -- -- -- -- 1.63 1.75 2.07 2.25 1.52 1.64 -- 10 -- 1.0 56 59 2.8 -- V V A mA pF nH
Test Conditions
IR = 100A IF = 22A IF = 45A See Fig. 1 IF = 22A, TJ = 125C VR = VR Rated See Fig. 2 TJ = 125C, VR = 480V VR = 200V See Fig. 3 Measured from center of bond pad to end of anode bonding wire
IRM CT LS
Max Reverse Leakage Current Junction Capacitance Series Inductance
Dynamic Recovery Characteristics (per Leg) @ TJ = 25C (unless otherwise specified)
Parameter
trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- 60 110 5.2 8.5 190 560 270 170 90 165 7.8 13 290 840 400 250 ns A nC A/s
Test Conditions
TJ = 25C See Fig. TJ = 125C 5 IF = 22A TJ = 25C See Fig. TJ = 125C 6 VR = 200V TJ = 25C See Fig. TJ = 125C 7 dif/dt = 200A/s TJ = 25C See Fig. TJ = 125C 8
Legend: 1 - Cathode 2 - N/C 3 - Anode
IR Case Style SMD-1
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HFA40HF60
100 1000
R ev erse C u rre n t - I R ( A )
100 10 1 0.1 0.01 0.001 0.0001
TJ = 1 50C TJ = 1 25C
Instantane ous Forward C u rrent - I F (A )
TJ = 25C TJ = -55C
10
0
200
400
600
R e ve rse V o lta g e - V R (V )
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
J un ctio n C a pa cita n ce - C T (pF )
1000
A
T J = 1 50 C T J = 1 25 C T J = 25 C
1 0.0 1.0 2.0 3.0 4.0
TJ = 25C
100
Forward V olta ge D ro p - V FM (V )
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
10 1 10 100 1000
R ev ers e V olta ge - VR (V )
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.1 1 10
0.1
0.05 0.02 0.01
0.01 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFA40HF60
150 100
120
I F = 44A I F = 22A I F = 11A I F = 44 A I F = 2 2A I F = 11 A
trr- (nC)
90
Irr- ( A)
10
60
30
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
0 100 1000 1 100
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
d i f /d t - (A /s )
1000
d i f /d t - (A / s )
Fig. 5 - Typical Reverse Recovery vs. dif/dt
Fig. 6 - Typical Recovery Current vs. dif/dt
2000
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
1600
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
I F = 44 A
Qrr- (nC)
1200
I F = 2 2A I F = 1 1A
di (rec) M/dt- (A /s)
1000
800
I F = 2 2A
I F = 1 1A
400
I F = 4 4A
0 100
di f /dt - (A /s)
1000
100 100
1000
d i f /d t - (A / s )
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
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HFA40HF60
3
IF
t rr ta tb
4
R E V E R S E R E C O V E R Y C IR C U IT
VR = 200V
0 Q rr
2
I RRM
0 .5 I R R M d i(re c)M /d t
5
0.0 1 L = 7 0 H D .U .T . D G IR F P 2 5 0 S
1
0 .7 5 I R R M d i f /d t
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr
d if/d t ADJUST
1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99
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