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GP2S40J0000F
GP2S40J0000F
Detecting Distance : 3mm Phototransistor Output, Compact Reflective Photointerrupter
Description
GP2S40J0000F is a compact-package, phototransistor output, reflective photointerrupter, with emitter and detector facing the same direction in a molding that provides non-contact sensing. The compact package series is a result of unique technology, combing transfer and injection molding, that also blocks visible light to minimize false detection. This device has a long focal distance for this family of devices.
Agency approvals/Compliance
1. Compliant with RoHS directive
Applications
1. Detection of object presence or motion. 2. Example : printer, optical storage
Features
1. Reflective with Phototransistor Output 2. Highlights : * Compact Size 3. Key Parameters : * Optimal Sensing Distance : 3mm * Package : 4x3x2.4mm * Visible light cut resin to prevent 4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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Sheet No.: D3-A02001EN Date Oct. 3. 2005 (c) SHARP Corporation
GP2S40J0000F
Internal Connection Diagram
Top view
4 3 1 Anode 2 Emitter 3 Collector 1 2 4 Cathode
Outline Dimensions
(0.4) Detector center
(Unit : mm)
(0.4) Emitter center
Top view
4 3
0.65 4-0.2+0.3 -0.1
(4) C0.5
1 2
1.75
4 2.4
4-0.5+0.3 -0.1
12.51
Date code mark * Tolerance : 0.2mm. * ( ) : Reference dimensions. * Burr's dimension : 0.15mm MAX. * The dimensions shown do not include those of burrs.
Product mass : approx. 0.085g Plating material : SnCu (Cu : TYP. 2%)
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Sheet No.: D3-A02001EN
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GP2S40J0000F
Date code (Symbol)
January July
February
August
March
September
April
October
May
November
June
December
Country of origin
Japan
Sheet No.: D3-A02001EN
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GP2S40J0000F
Absolute Maximum Ratings
Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature 1 Soldering temperature
Symbol Rating IF 50 VR 6 PD 75 VCEO 35 VECO 6 20 IC 75 PC 100 Ptot Topr -25 to +85 Tstg -40 to +100 Tsol 260
(Ta=25C) Unit mA V mW V V mA mW mW C C C
Soldering area
1 For 5s
Electro-optical Characteristics
Parameter Forward voltage Input Reverse current Output Collector dark current 2 Collector Current Transfer 3 Leak current characRise time Response time teristics Fall time

1mm or more
Symbol VF IR ICEO IC ILEAK tr tf
Condition IF=20mA VR=3V VCE=20V IF=20mA, VCE=5V IF=20mA, VCE=5V VCE=2V, IC=100A, RL=1k, d=4mm
MIN. - - - 0.5 - - -
TYP. 1.2 - 1 - - 50 50
(Ta=25C) MAX. Unit 1.4 V 10 A 100 nA 3 mA 500 nA 150 s 150
2 The condition and arrangement of the reflective object are shown below. 3 No reflective object
Test Arrangement for Collector Current
Al evaporation d=4mm glass plate
Sheet No.: D3-A02001EN
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GP2S40J0000F
Fig.1 Forward Current vs. Ambient Temperature
60 50
Fig.2 Collector Power Dissipation vs. Ambient Temperature
120 100 Power dissipation P (mW) 80 75 60 40 20 15 Ptot
Forward current IF (mA)
40 30 20 10 0 -25
P, Pc
0
25
50
75 85
100
0 -25
0
25
50
75 85
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig.3 Forward Current vs. Forward Voltage
Ta =75C Forward current IF (mA) 100 50C 25C 0C -25C
Fig.4 Collector Current vs. Forward Current
3 VCE =5V Ta =25C
Collector current IC (mA)
2.4
1.8
10
1.2
0.6 1 0 0.5 1 1.5 2 Forward voltage VF (V) 2.5 3
0
0
5
10 15 20 Forward current IF (mA)
25
30
Fig.5 Collector Current vs. Collector-Emitter Voltage
Ta =25C 3
Fig.6 Relative Collector Current vs. Ambient Temperature
150 125 IF =20mA VCE=5V
Collector current IC (mA)
2.4
IF =50mA 40mA
Relative collector current (%) 12
100 75 50 25 0 -25
1.8
30mA 20mA 10mA
1.2
0.6
5mA
0
0
2.4 4.8 7.2 9.6 Collector-emitter voltage VCE (V)
0
25 50 75 Ambient temperature Ta (C)
Sheet No.: D3-A02001EN
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GP2S40J0000F
Fig.7 Collector Dark Current vs. Ambient Temperature
10-6 VCE= 20V Collector dark current ICEO (A)
Fig.8 Response Time vs. Load Resistance
1 000 Response time tr, tf, td, ts (s)
tr
10-7
tf
100
td
10-8
10-9
10 VCE = 5V IC =100mA Ta = 25C 100
ts
10-10
0
25 50 75 Ambient temperature Ta (C)
100
1 0.1
1 10 Load resistance RL (K)
Fig.9 Test Circuit for Response Time
Input Reflector Plate
Fig.10 Detecting Position Characteristics (1)
White Black Test Card OMS
Relative collector current (%)
VCC RL Input Measuring Output terminal td tr ts tf 10% 90%
100 90 80 70 60 50 40 30 20 10 0 0 1
4mm
+ 1mm
L= 0
IF=20mA VCE=5V Ta=25C
2 3 4 5 6 Sensor moving distance L (mm)
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Fig.11 Detecting Position Characteristics (2)
White Black
Fig.12 Relative Collector Current vs. Distance (Reference value)
100
100 Relative collector current (%) 90 80 70 60 50 40 30 20 10 0 0 1
4mm
IF =20mA VCE =5V Ta =25C
Al evaporation glass d
+
1mm L=0
Relative collector current (%)
80
60
IF =20mA VCE =5V Ta =25C
40
20
2 3 4 5 6 Sensor moving distance L (mm)
7
0
2
4
6
8
10
Distance d (mm)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D3-A02001EN
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GP2S40J0000F
Design Considerations Design guide
1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Distance characteristic Please refer to Fig.12 (Relative collector current vs. Distance) to set the distance of the photointerrupter and the object. This product is not designed against irradiation and incorporates non-coherent IRED.
Degradation
In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration.
Parts
This product is assembled using the below parts.
* Photodetector (qty. : 1)
Category Phototransister Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3
* Material
Case Black polyphenylene sulfide resin Lead frame 42Alloy Lead frame plating SnCu plating
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GP2S40J0000F
Manufacturing Guidelines Soldering Method Flow Soldering:
Soldering should be completed below 260C and within 5 s. Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions.
Cleaning instructions Solvent cleaning :
Solvent temperature should be 45C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
Do not execute ultrasonic cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
Presence of ODC
This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). *Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).
Sheet No.: D3-A02001EN
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GP2S40J0000F
Package specification Sleeve package Package materials
Sleeve : Polystyrene Stopper : Styrene-Butadiene
Package method
MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 20 sleeves in one case.
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GP2S40J0000F
Important Notices
* The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. * Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. * Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). * If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. * This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. * Contact and consult with a SHARP representative if there are any questions about the contents of this publication.
[H145]
Sheet No.: D3-A02001EN
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