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| MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE FS25SM-10A OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 5.0 f 3.2 2 2 4 20.0 1.0 5.45 5.45 19.5MIN. 4.4 0.6 2.8 4 G 10V DRIVE G VDSS ................................................................................ 500V G rDS (ON) (MAX) .............................................................. 0.20 G ID ......................................................................................... 25A GATE DRAIN SOURCE DRAIN TO-3P APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings 500 30 25 75 25 200 -55 ~ +150 -55 ~ +150 4.8 Unit V V A A A W C C g Sep. 2001 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 200H Maximum power dissipation Channel temperature Storage temperature Weight Typical value MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 12A, VGS = 10V ID = 12A, VGS = 10V ID = 12A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 30 -- -- 2.5 -- -- 15.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.15 1.80 25.0 4600 460 100 60 100 630 140 1.5 -- Max. -- -- 10 1 3.5 0.20 2.40 -- -- -- -- -- -- -- -- 2.0 0.625 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 12A, VGS = 10V, RGEN = RGS = 50 IS = 12A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 250 MAXIMUM SAFE OPERATING AREA 7 5 3 2 POWER DISSIPATION PD (W) 200 DRAIN CURRENT ID (A) 102 tw = 10s 100s 1ms TC = 25C Single Pulse 10 ms 7 5 3 2 150 101 100 7 5 3 2 50 100 7 5 3 2 DC 0 0 50 100 150 200 23 5 7 101 23 5 7 102 23 57 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 200W VGS = 20V,10V,6V OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V,10V,8V,5V DRAIN CURRENT ID (A) 40 TC = 25C Pulse Test DRAIN CURRENT ID (A) 16 30 5V 12 TC = 25C Pulse Test 20 8 10 4 4V 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 16 0.4 TC = 25C Pulse Test 12 0.3 VGS = 10V 8 ID = 40A 0.2 4 25A 12A 0.1 VGS = 20V 0 0 4 8 12 16 20 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 103 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 32 102 7 5 3 2 TC = 25C,75C,125C 24 16 101 7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102 8 0 TC = 25C VDS = 10V Pulse Test 0 4 8 12 16 20 100 0 10 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 td(off) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 103 7 5 3 2 102 7 5 3 2 101 Ciss 3 2 tf Coss 102 7 5 3 2 td(on) tr Crss TCh = 25C VGS = 0V f = 1MHZ 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 TCh = 25C VGS = 10V VDD = 200V RGEN = RGS = 50 2 3 5 7 101 2 3 5 7 102 101 100 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = 0V Pulse Test TC = 25C 75C GATE-SOURCE VOLTAGE VGS (V) 20 16 SOURCE CURRENT IS (A) VDS = 100V 200V 32 12 400V 24 125C 8 16 4 TCh = 25C ID = 25A 8 0 0 80 160 240 320 400 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 12A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 1.2 100 7 5 3 2 1.0 D = 1.0 = 0.5 = 0.2 = 0.1 = 0.05 = 0.02 Single Pulse = 0.01 PDM tw T D= tw T 0.8 10-1 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (C) Sep. 2001 |
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