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| FQB34P10 / FQI34P10 QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. (R) Features * * * * * * * -33.5A, -100V, RDS(on) = 0.06 @VGS = -10 V Low gate charge ( typical 85 nC) Low Crss ( typical 170 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating S D G! ! G S D2-PAK FQB Series I2-PAK GDS FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) FQB34P10 / FQI34P10 -100 -33.5 -23.5 -134 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * 2200 -33.5 15.5 -6.0 3.75 155 1.03 -55 to +175 300 TJ, TSTG TL Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 0.97 40 62.5 Units C/W C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FQB34P10 / FQI34P10 Electrical Characteristics Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -100 V, VGS = 0 V VDS = -80 V, TC = 150C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -100 -------0.1 -------1 -10 -100 100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 A VGS = -10 V, ID = -16.75 A VDS = -40 V, ID = -16.75 A (Note 4) -2.0 --- -0.049 23 -4.0 0.06 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---2240 730 170 2910 950 220 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -50 V, ID = -33.5 A, RG = 25 (Note 4, 5) -------- 25 250 160 210 85 15 45 60 510 330 430 110 --- ns ns ns ns nC nC nC VDS = -80 V, ID = -33.5 A, VGS = -10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -33.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -33.5 A, dIF / dt = 100 A/s (Note 4) ------ ---160 0.88 -33.5 -134 -4.0 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L =mH, IAS = -33.5A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -33.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FQB34P10 / FQI34P10 Typical Characteristics 10 2 -ID, Drain Current [A] -ID , Drain Current [A] 10 1 VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V Top : 10 2 10 1 175 10 0 25 10 0 10 -1 -55 Notes : 1. VDS = -40V 2. 250 s Pulse Test Note : 1. 250 s Pulse Test 2. TC = 25 10 -2 10 -1 10 0 10 1 10 -1 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.35 10 2 RDS(on) [], Drain-Source On-Resistance VGS = - 10V 0.25 0.20 VGS = - 20V 0.15 0.10 0.05 0.00 -IDR , Reverse Drain Current [A] 0.30 10 1 10 0 175 25 Note : T = 25 J Notes : 1. VGS = 0V 2. 250s Pulse Test 0 25 50 75 100 125 150 175 200 10 -1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 6500 6000 5500 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 -VGS, Gate-Source Voltage [V] Coss Ciss Notes : 1. VGS = 0 V 2. f = 1 MHz 10 VDS = -20V VDS = -50V VDS = -80V Capacitances [pF] 4500 4000 3500 3000 2500 2000 1500 1000 500 0 -1 10 8 6 Crss 4 2 Note : ID = -33.5 A 10 0 10 1 0 0 20 40 60 80 100 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FQB34P10 / FQI34P10 Typical Characteristics (Continued) 1.2 2.5 -BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = -250 A 0.5 Notes : 1. VGS = -10 V 2. ID = -16.75 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 40 Operation in This Area is Limited by R DS(on) 35 10 2 100 s 1 ms 10 ms -ID, Drain Current [A] 2 -ID, Drain Current [A] 30 25 20 15 10 5 0 25 10 1 DC 10 0 Notes : 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse o 10 -1 10 0 10 1 10 50 75 100 125 150 175 -VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 0 D = 0 .5 Z JC(t), Thermal Response 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 sin g le p u ls e N ote s : 1. Z J C (t) = 0 .97 /W M a x. 2. D u ty F a cto r, D = t 1/t 2 3. T JM - T C = P DM * Z JC (t) PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u lse D u ra tio n [se c ] Figure 11. Transient Thermal Response Curve (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FQB34P10 / FQI34P10 Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS -10V Qgs Qg VGS Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG VGS RL VDD td(on) t on tr td(off) t off tf VGS 10% -10V DUT VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG -10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD tp Time VDS (t) VDD DUT VDD ID (t) IAS BVDSS (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FQB34P10 / FQI34P10 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT I SD L Driver RG Compliment of DUT (N-Channel) _ VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V I SD ( DUT ) Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt VDD (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FQB34P10 / FQI34P10 Package Dimensions D2-PAK (0.40) 9.90 0.20 4.50 0.20 1.30 -0.05 +0.10 1.20 0.20 9.20 0.20 15.30 0.30 1.40 0.20 2.00 0.10 0.10 0.15 2.54 0.30 9.20 0.20 Rev. B, June 2004 2.40 0.20 4.90 0.20 (0.75) 1.27 0.10 2.54 TYP 0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40) 0 ~3 +0.10 0.50 -0.05 10.00 0.20 15.30 0.30 (1.75) (2XR0.45) 0.80 0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation 4.90 0.20 (7.20) FQB34P10 / FQI34P10 Package Dimensions (Continued) I2-PAK 9.90 0.20 (0.40) 4.50 0.20 +0.10 1.30 -0.05 1.20 0.20 9.20 0.20 MAX 3.00 (1.46) 13.08 0.20 (0.94) 1.27 0.10 1.47 0.10 0.80 0.10 10.08 0.20 MAX13.40 (4 ) 5 2.54 TYP 2.54 TYP 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I11 |
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