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| FMMT459 500V Silicon NPN high voltage switching transistor Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in high efficiency Telecom and protected line switching applications. Features 6V reverse blocking capability Low saturation voltage - 90mV @ 50mA Hfe 50 @ 30 mA IC=150mA continuous SOT23 package with Ptot 625mW Specification can be supplied in other package outlines Applications Electronic test equipment Offline switching circuits Piezo actuators RCD circuits Ordering information Device FMMT459TA FMMT459TC Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 Pin out - top view Device marking 459 Issue 5 - August 2005 (c) Zetex Semiconductors plc 2005 1 www.zetex.com FMMT459 Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Emitter-collector voltage Peak pulse current Continuous collector current* Base current Power dissipation @ TA=25C* Linear derating factor Power dissipation @ TA=25C Linear derating factor Operating and storage temperature range Symbol VCBO VCEV VCEO VEBO VECV ICM IC IB PD Limit 500 500 450 6 6 0.5 0.15 0.2 625 5 806 6.4 -55 to +150 Unit V V V V V A A A mW mW/C mW mW/C C PD Tj:Tstg Thermal resistance Parameter Junction to ambient* Junction to ambient Symbol R JA R JA Value 200 155 Unit C/W C/W NOTES: * For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions as above measured at t<5secs. Issue 5 - August 2005 (c) Zetex Semiconductors plc 2005 2 www.zetex.com FMMT459 Thermal characteristics 1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 100m DC 1s 10m 100ms 10ms 1ms 100s 1m 100m Single Pulse T amb=25C V CE Collector-Emitter Voltage (V) 1 10 100 Max Power Dissipation (W) IC Collector Current (A) Temperature (C) Safe Operating Area Thermal Resistance (C/W) 200 150 D=0.5 Derating Curve 100 50 0 100 D=0.2 D=0.1 Single Pulse D=0.05 1m 10m 100m Pulse Width (s) 1 10 100 1k Transient Thermal Impedance Issue 5 - August 2005 (c) Zetex Semiconductors plc 2005 3 www.zetex.com FMMT459 Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter-base breakdown voltage (reverse blocking) Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter turn-on voltage Transition frequency Output capacitance Turn-on time Turn-off time Symbol BVCBO BVCEV BVCEO BVEBO BVECV Min. 500 500 450 6 6 Typ. 700 700 500 8.1 8.1 Max. Unit V V V V V Conditions IC = 100 A IC = 10 A, 0.3V > VBE > -1V IC = 10mA* IE = 100 A IC = 1 A, 0.3V > VBC > -6V VCE=450V VCB=450V VEB=5V IC = 30mA, VCE = 10V IC = 50mA*, VCE = 10V 75 90 0.9 0.9 mV mV V V MHz 5 113 3450 PF ICES ICBO IEBO HFE VCE(sat) 50 120 70 60 70 VBE(sat) VBE(on) fT Cobo t(ON) t(OFF) 50 0.76 0.71 100 100 100 nA nA nA IC = 20mA, IB = 2mA* IC = 50mA, IB = 6mA* IC = 50mA, IB = 5mA* IC = 50mA, VCE = 10V* IC = 10mA, VCE = 20V f = 20MHZ VCB = 20V, f = 1MHZ IC = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA IC = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA ns ns NOTES: * Measured under pulsed conditions. Pulse width = 300 s; duty cycle <2% Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between Terminals. Issue 5 - August 2005 (c) Zetex Semiconductors plc 2005 4 www.zetex.com FMMT459 Electrical characteristics 1 Tamb=25C IC/IB=50 0.40 0.35 0.30 IC/IB=20 100C 25C -55C VCE(SAT) (V) VCE(SAT) (V) 0.25 0.20 0.15 0.10 0.05 100m IC/IB=10 IC/IB=20 10m 1m IC Collector Current (A) 10m 100m 1m VCE(SAT) v IC IC Collector Current (A) 10m 100m VCE(SAT) v IC 1.2 VCE=10V 100C 25C 210 180 1.0 IC/IB=20 Normalised Gain Typical Gain (hFE) VBE(SAT) (V) 1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m -55C 150 120 90 60 30 0 0.8 -55C 0.6 0.4 1m 25C 100C IC Collector Current (A) hFE v IC IC Collector Current (A) 10m 100m VBE(SAT) v IC 1.0 VCE=10V 0.8 VBE(ON) (V) -55C 0.6 25C 100C 0.4 1m IC Collector Current (A) 10m 100m VBE(ON) v IC Issue 5 - August 2005 (c) Zetex Semiconductors plc 2005 5 www.zetex.com FMMT459 Packaging details - SOT23 L H N D 3 leads G M B A C K F Package dimensions Dimensions in inches are control dimensions, dimensions in millimeters are approximate. Dim. Millimeters Min. A B C D F G 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 H K L M N Dim. Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 0.95 Nom. - 0.0375 Nom. - 1.90 Nom. 0.075 Nom. Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 5 - August 2005 (c) Zetex Semiconductors plc 2005 6 www.zetex.com |
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