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FJPF3305 FJPF3305 High Voltage Switch Mode Application * High Speed Switching * Suitable for Electronic Ballast and Switching Regulator 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 700 400 9 4 8 2 30 150 - 65 ~ 150 Units V V V A A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Test Condition IC=500A, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCB=700V, IE=0 VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A Min. 700 400 9 Typ. Max. Units V V V 1 1 19 8 35 40 0.5 0.6 1 1.2 1.6 4 65 0.8 4 0.9 A A Current Gain Collector-Emitter Saturation Voltage V V V V V MHz pF s s s VBE(sat) fT Cob tON tSTG tF Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time IC=1A, IB=0.2A IC=2A, IB=0.5A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=125V, IC=2A=5IB1=-5IB2 RL=62.5 * Pulse test: PW300s, Duty Cycle2% hFE Classification Classification hFE2 (c)2004 Fairchild Semiconductor Corporation R 19 ~ 28 O 26 ~ 35 Rev. A, March 2004 FJPF3305 Typical Characteristics 5.0 4.5 100 VCE = 5V IB = 300mA Ta = 125 C O IC [A], COLLECTOR CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 Ta = 75 C O hFE, DC CURRENT GAIN Ta = - 25 C 10 O Ta = 25 C O IB = 100mA IB = 50mA 7 8 9 10 1 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CUTRRENT Figure 1. Static Characteristics Figure 2. DC Current Gain(R-Grade) 100 10 Ta = 125 C O Ta = 75 C O VCE(sat) [V], SATURATION VOLTAGE VCE = 5V IC = 4 IB Ta = 125 C 1 O hFE, DC CURRENT GAIN Ta = - 25 C 10 O Ta = 25 C O Ta = 75 C Ta = - 25 C 0.1 O O Ta = 25 C O 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC [A], COLLECTOR CUTRRENT IC [A], COLLECTOR CURRENT Figure 3. DC Current Gain(O-Grade) Figure 4. Saturation Voltage(R-Grade) 10 10 VCE(sat) [V], SATURATION VOLTAGE Ta = 125 C 1 O VBE(sat) [V], SATURATION VOLTAGE IC = 4 IB IC = 4 IB 1 Ta = - 25 C O Ta = 25 C O Ta = 75 C Ta = - 25 C 0.1 O O Ta = 125 C O Ta = 75 C O 0.1 Ta = 25 C O 0.01 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Saturation Voltage(O-Grade) Figure 6. Saturation Voltage(R-Grade) (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FJPF3305 Typical Characteristics (Continued) 10 10 VCE(sat) [V], SATURATION VOLTAGE IC = 4 IB 1 Ta = - 25 C O Ta = 25 C O tF & tSTG [s], SWITCHING TIME tSTG 1 Ta = 125 C O Ta = 75 C O tF 0.1 0.1 IB1 = - IB2 = 0.4A VCC = 125V 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 7. Saturation Voltage(O-Grade) Figure 8. Switching Time 10 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 10 IC (Pulse) IC (DC) 1ms 5ms 500s 1 0.1 IB1=2A, RB2=0 VCC=50V, L=1mH 1 10 100 1000 TC = 25 C Single Pulse 0.01 1 10 100 1000 O VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area 50 PC[W], POWER DISSIPATION 40 30 20 10 0 0 25 50 o 75 100 125 150 175 Tc[ C], CASE TEMPERATURE Figure 11. Power Derating (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FJPF3305 Package Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 0 ) 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 15.87 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM i-LoTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM PACMANTM POPTM ISOPLANARTM Power247TM LittleFETTM MICROCOUPLERTM PowerSaverTM PowerTrench MicroFETTM QFET MicroPakTM QSTM MICROWIRETM QT OptoelectronicsTM MSXTM Quiet SeriesTM MSXProTM RapidConfigureTM OCXTM RapidConnectTM OCXProTM SILENT SWITCHER OPTOLOGIC SMART STARTTM OPTOPLANARTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10 |
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