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FJP9100
FJP9100
High Voltage Power Darlington Transistor
* Built-in Resistor at Base-Emitter : R1(Typ.)=2000 * Built-in Resistor at Base : RB(Typ.)=700 100
1 1.Base
TO-220 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 600 275 10 4 6 0.5 40 150 - 55 ~ 150 Units V V V A A A W C C
R1 B RB Equivalent Circuit C
R 1 2000 R B 700
E
* Pulse Test: PW=300s, duty Cycle=2% Pulsed
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCER BVCEO(sus) BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Test Condition IC = 500A, IE = 0 IC = 1mA, RBE = 330 IC = 1.5A, IB = 50mA, L=25mH IE = 500A, IC = 0 VCB = 600V, IE = 0 VEB = 10V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 2A, IB = 5mA IC = 2A, IB = 5mA VCB = 10V, IE = 0, f=1MHz 110 1000 1000 Min. 600 600 275 10 0.1 0.1 5000 1.5 6.0 V V pF Typ. Max. Units V V V V mA mA
(c)2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJP9100
Typical Characteristics
5
10k
IB = 1.4mA
Ta = 75 C Ta = 125 C
o
o
IC [A], COLLECTOR CURRENT
4
DC CURRENT GAIN
1k
3
Ta = 25 C Ta = - 25 C
o
o
IB = 0.6mA
2
IB = 0.4mA
100
1
IB = 0
0 0 1 2 3 4 5 6 7 10 0.1
V CE = 5V
1 10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic
Figure 2. DC current Gain
100
100
VCE(sat) [V], SATURATION VOLTAGE
IC = 400 IB
IC = 400 IB
Ta = 125 C
10
o
VBE(sat), SATURATION VOLTAGE
10
Ta = 75 C
o
Ta = 125 C Ta = 75 C
1
o
o
1
Ta = 25 C
o
o
Ta = 25 C Ta = - 25 C
o
o
Ta = - 25 C
0.1 0.1
1
10
0.1 0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10k
1000
f = 1MHz, IE = 0
R1
1k
Cob [pF], OUPUT CAPACITANCE
150
RB & R1 [], RESISTANCE
100
RB
100 -50
-25
0
o
25
50
75
100
125
10 1 10 100
TA [ C], ABBIENT TEMPERATURE
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. RB & R1 vs. Ambient Temperature
Figure 6. Output Capacitance
(c)2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJP9100
Typical Characteristics (Continued)
50
PC [W], COLLECTOR POWER DISSIPATION
45 40 35 30 25 20 15 10 5 0 0 25 50
o
75
100
125
150
175
TC [ C], CASE TEMPERATURE
Figure 7. Power Derating
(c)2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJP9100
Package Dimensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) o3.60 0.10
(1.70)
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2003 Fairchild Semiconductor Corporation Rev. A, May 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2003 Fairchild Semiconductor Corporation
Rev. I2

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