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| FDR8702H March 2003 FDR8702H 20V N & P-Channel PowerTrench MOSFET General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features * N channel 3.6 A, 20V * P channel -2.6 A, -20V RDS(ON) = 38 m @ VGS = 4.5 V RDS(ON) = 54 m @ VGS = 2.5 V RDS(ON) = 80 m @ VGS = -4.5 V RDS(ON) = 110 m @ VGS = -2.5 V Applications DC/DC converter Power management * Fast switching speed. * High performance trench technology for extremely low RDS(ON) D D D D 5 6 7 G2 S2 Q2(P) 44 3 3 Q1(N) 2 2 1 1 8 SuperSOT -8 TM G1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) Ratings Q1 (N) 20 12 3.6 15 0.8 -55 to +150 Q2 (P) -20 8 -2.6 -10 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 146 76 40 C/W Package Marking and Ordering Information Device Marking .8702 Device FDR8702H Reel Size 13'' Tape width 12mm Quantity 2500 units 2003 Fairchild Semiconductor Corp. FDR8702H Rev C (W) FDR8702H Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Test Conditions Q Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, VGS = 0 V, ID = 250 A ID = -250 A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 20 -20 36 -15 1 -1 100 100 V mV/C A nA ID = 250 A, Ref to 25C ID = -250 A, Ref to 25C VGS = 0 V VDS = 16 V, VDS = - 16 V, VGS = 0 V VGS = 12 V, VGS = 8 V, VDS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) RDS(on) ID(on) gFS RG Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Gate Resistance VDS = VGS, VDS = VGS, ID = 250 A ID = -250 A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 10 -10 15 9 1 4.8 0.6 -0.4 0.8 -0.7 -2 2.5 31 42 41 66 85 83 1.5 -1.6 V mV/C 38 54 58 80 110 108 m m A S ID = 250 A, Ref to 25C ID = -250 A, Ref to 25C VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VGS=4.5V,ID=3.6A,TJ=125C VGS = -4.5V, ID = -2.6A VGS = -2.5V, ID = -2.2A VGS=-4.5V,ID=-2.6A,TJ=125C VGS = 4.5 V, VDS = 5 V VGS = -4.5V, VDS = -5 V ID = 250 A VDS = VGS, ID = -250 A VDS = VGS, VGS = 15 mV, f = 1.0 MHz Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance For Q2: VDS= -10V, VGS=0V, f=1MHz For Q1: VDS=10V, VGS=0V, f=1MHz Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 650 607 170 165 80 60 8 12 9 11 16 26 7 8 7 6 1.3 1.2 2.2 1.6 16 22 18 20 29 42 14 16 10 8 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge For Q1: VDS = 10V, VGS = 4.5 V, For Q2: VDS = -10 V, VGS = -4.5 V, For Q1: VDS = 10 V, VGS = 4.5 V For Q2: VDS = -10 V, VGS = -4.5 V ns ns ns ns nC nC nC ID= 1 A, RGEN = 6 ID= -1 A, RGEN = 6 ID= 3.6 A, ID= -2.6 A, FDR8702H Rev C (W) FDR8702H Electrical Characteristics T Symbol IS VSD trr Irm Qrr Notes: A = 25C unless otherwise noted Parameter Test Conditions Q Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min Typ Max 0.7 Units A V ns A nC Drain-Source Diode Characteristics Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovery Charge VGS = 0 V, IS = 0.7A, Note 2 VGS = 0 V, IS = -0.7A, Note 2 For Q1: IF = 3.6A, dIF/dt = 100A/s For Q2: IF = -2.6A, dIF/dt = 100A/s -0.7 1.2 -1.2 0.7 -0.7 16 22 0.6 0.7 5 8 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 76C/W when 2 mounted on a 1in pad of 2 oz copper b) 146C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDR8702H Rev C (W) FDR8702H Typical Characteristics : Q1 15 VGS = 4.5V 3.0V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 VGS = 2.0V 1.8 1.6 1.4 1.2 1 0.8 0 3 6 9 12 15 ID, DRAIN CURRENT (A) 2.5V 3.0V 3.5V 4.5V ID, DRAIN CURRENT (A) 12 2.0V 9 6 3 1.5V 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.12 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = 3.6A VGS = 4.5V ID = 1.8A 0.1 1.2 0.08 TA = 125oC 0.06 1 TA = 25oC 0.04 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0.02 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 15 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 ID, DRAIN CURRENT (A) 12 TA = -55oC IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25oC 10 1 0.1 0.01 VGS = 0V 125oC 9 TA = 125oC 25oC -55oC 6 3 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR8702H Rev C (W) FDR8702H Typical Characteristics : Q1 5 VGS, GATE-SOURCE VOLTAGE (V) 1000 ID = 3.6A VDS = 5V 15V 10V 800 CAPACITANCE (pF) CISS 600 f = 1 MHz VGS = 0 V 4 3 2 400 COSS 200 CRSS 1 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 100s 40 SINGLE PULSE RJA = 146C/W TA = 25C 30 1 VGS = 4.5V SINGLE PULSE RJA = 146oC/W TA = 25oC 0.01 0.1 1 10s DC 1s 20 0.1 10 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 146 C/W o 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design. FDR8702H Rev C (W) FDR8702H Typical Characteristics : Q2 9 8 -ID, DRAIN CURRENT (A) 7 6 5 4 3 2 1 0 0 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -2.5V -2.0V 2 1.8 1.6 1.4 1.2 1 0.8 VGS = -2.0V -1.5V -2.5V -3.0V -3.5V -4.5V 1 2 3 0 1 2 3 4 5 6 7 8 9 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.24 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ID = -2.6A VGS = -4.5V ID = -1.3 A RDS(ON), ON-RESISTANCE (OHM) 0.2 0.16 TA = 125oC 0.12 0.08 TA = 25oC 0.04 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 TJ, JUNCTION TEMPERATURE (oC) Figure 14. On-Resistance Variation with Temperature. 10 VDS = -5V -ID, DRAIN CURRENT (A) 8 TA = -55oC 25oC 125oC 6 -IS, REVERSE DRAIN CURRENT (A) Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 100 10 1 0.1 0.01 -55oC 0.001 0.0001 VGS = 0V TA = 125oC 25oC 4 2 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR8702H Rev C (W) FDR8702H Typical Characteristics : Q2 5 -VGS, GATE-SOURCE VOLTAGE (V) 1000 ID =-2.6A VDS = -5V -15V -10V 800 CAPACITANCE (pF) CISS 600 f = 1MHz VGS = 0 V 4 3 2 400 COSS 200 CRSS 1 0 0 2 4 Qg, GATE CHARGE (nC) 6 8 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 18. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 19. Capacitance Characteristics. 50 -ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1ms 10ms 100ms 40 SINGLE PULSE RJA = 146C/W TA = 25C 30 1 VGS = -4.5V SINGLE PULSE RJA = 146oC/W TA = 25oC 0.01 0.1 1 10s DC 1s 20 0.1 10 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 R JA (t) = r(t) * R JA R JA = 146 C/W P(pk) t1 t2 SINGLE PULSE 0.1 0.1 0.05 0.02 0.01 0.01 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 1000 Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design. FDR8702H Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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