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| FDP61N20 200V N-Channel MOSFET September 2005 UniFET FDP61N20 200V N-Channel MOSFET Features * 61A, 200V, RDS(on) = 0.041 @VGS = 10 V * Low gate charge ( typical 58 nC) * Low Crss ( typical 80 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FCP Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FDP61N20 200 61 38.5 244 30 1440 61 41.7 4.5 417 3.3 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/C C C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min. --- Max. 0.3 62.5 Unit C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP61N20 Rev. A FDP61N20 200V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP61N20 Device FDP61N20 Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 200V, VGS = 0V VDS = 160V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 30.5A VDS = 40V, ID =30.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 200 ------ Typ. -0.2 ----- Max Units --1 10 100 -100 V V/C A A nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.034 44.5 5.0 0.041 -V S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---2615 645 80 3380 840 120 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160V, ID = 61A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 100V, ID = 61A RG = 25 -------- 40 215 125 170 58 19 24 90 440 260 350 75 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.58mH, IAS = 61A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 61A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 61A VGS = 0V, IS = 61A dIF/dt =100A/s (Note 4) ------ ---162 1.5 61 244 1.4 --- A A V ns C 2 FDP61N20 Rev. A www.fairchildsemi.com FDP61N20 200V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID, Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 2 10 1 10 1 150 C 25 C -55 C ? Notes : 1. VDS = 40V o o o 10 0 10 -1 10 0 10 1 10 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage RDS(ON) [O ], Drain-Source On-Resistance Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.06 0.05 0.04 VGS = 10V IDR, Reverse Drain Current [A] 10 2 10 1 150? 25? 0.03 VGS = 20V ? Note : TJ = 25 ? Notes : 1. VGS = 0V 0 0.02 0 25 50 75 100 125 150 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 12 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 40V VDS = 100V VDS = 160V Coss VGS, Gate-Source Voltage [V] Capacitances [pF] 8 4000 Ciss 6 2000 Crss ? Note ; 1. VGS = 0 V 2. f = 1 MHz 4 2 ? Note : ID = 61A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDP61N20 Rev. A 2. 250 ? Notes : 1. 250 Pulse Test 2. TC = 25? 2. 250 Pulse Test 12 Pulse Test 2.0 2.2 www.fairchildsemi.com FDP61N20 200V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 3.0 Figure 8. On-Resistance Variation vs. Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 Drain-Source On-Resistance 2.5 RDS(ON), (Normalized) 2.0 1.0 1.5 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 1.0 ? Notes : 1. VGS = 10 V 2. ID = 30.5 A 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] Figure 9. Safe Operating Area 10 3 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A] 100 s 1 ms 10 ms DC 100 ms Operation in This Area is Limited by R DS(on) 10 0 10 -1 ? Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -2 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve (t), Thermal Response D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 10 -2 0 .0 2 0 .0 1 s in g le p u ls e JC Z? 10 -5 10 -4 FDP61N20 Rev. A 0.5 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 70 10 s 60 50 40 30 20 10 2 0 25 50 75 100 125 150 TC, Case Temperature [? ] PDM t1 t2 ? N o te s : 1 . Z ? JC ( t) = 0 .3 ? /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P D M * Z ? JC ( t) 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] 4 www.fairchildsemi.com FDP61N20 200V N-Channel MOSFET Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time 5 FDP61N20 Rev. A www.fairchildsemi.com FDP61N20 200V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FDP61N20 Rev. A www.fairchildsemi.com FDP61N20 200V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters 7 www.fairchildsemi.com FDP61N20 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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