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PD - 91615B
FA38SA50LC
HEXFET(R) Power MOSFET
l l l l l l l l
Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance
D
VDSS = 500V RDS(on) = 0.13
G
ID = 38A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.
S O T -2 2 7
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew
Max.
38 24 150 500 4.0 20 580 38 50 16 -55 to + 150 2.5 (1.3N*M)
Units
A W W/C V mJ A mJ V/ns C kV
Thermal Resistance
Parameter
RJC RCS Junction-to-Case Case-to-Sink, Flat, Greased Surface
Typ.
--- 0.05
Max.
0.25 ---
Units
C/W
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1
2/2/99
FA38SA50LC
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ls Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 500 --- --- 2.0 22 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 1.0mA --- V/C Reference to 25C, ID = 1mA 0.13 VGS = 10V, ID = 23A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 23A 50 VDS = 500V, VGS = 0V A 500 VDS = 400V, VGS = 0V, TJ = 125C 200 VGS = 20V nA -200 VGS = -20V 420 ID = 38A 55 nC VDS = 400V 220 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 38A ns --- RG = 10 (Internal) --- RD = 8, See Fig. 10 --- nH Between lead, and center of die contact 6900 --- VGS = 0V 1600 --- pF VDS = 25V 580 --- = 1.0MHz, See Fig. 5
Typ. --- 0.66 --- --- --- --- --- --- --- 280 37 150 42 340 200 330 5.0
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol 38 --- --- showing the A integral reverse --- --- 150 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 38A, VGS = 0V --- 830 1300 ns TJ = 25C, IF = 38A --- 15 22 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 38A, di/dt 410A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 0.80mH
RG = 25, IAS = 38A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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FA38SA50LC
1000
VGS 1 5V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B OT T O M 4.5V TOP
1000
ID , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10
4.5V
1 1 10
20 s P U LS E W ID TH T C = 25C
4.5V
A
10 1 10
20s PULSE WIDTH TJ = 150 C
100
100
VD S , Drain-to-So urce V oltage (V )
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
ID = 38A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
100
2.0
TJ = 150 C
1.5
TJ = 25 C
10
1.0
0.5
1 4 5 6
V DS = 50V 20s PULSE WIDTH 7 8
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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FA38SA50LC
16000 14000 12000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 38A VDS = 400V VDS = 250V VDS = 100V
16
C, Capacitance (pF)
10000
Ciss
8000 6000 4000
12
8
Coss Crss
4
2000 0 1 10 100
0 0 80 160
FOR TEST CIRCUIT SEE FIGURE 13
240 320 400
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000 1000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
I D , Drain Current (A)
100
100 10us
TJ = 150 C
10
100us 10 1ms
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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FA38SA50LC
QG
VDS VGS
RD
10V
QGS VG QGD
D.U.T.
+
RG
- VDD
10V
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50K 12V .2F .3F
90%
D.U.T. VGS
3mA
+ V - DS
10% VGS
td(on)
IG ID
tr
t d(off)
tf
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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FA38SA50LC
1200
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
TOP BOTTOM
1000
ID 17A 24A 38A
VDS
L
D RIV E R
800
RG
20 V tp
D .U .T
IA S
+ - VD D
A
600
0 .01
400
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
6
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FA38SA50LC
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS
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FA38SA50LC
SOT-227 Package Details
4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) 4 3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) -A 3 6.2 5 ( .24 6 ) 1 2.50 ( .4 92 ) 2 5 .7 0 ( 1.0 12 ) 2 5 .2 0 ( .9 9 2 ) -B 1 7 .50 ( .29 5 ) 3 0 .2 0 ( 1 .1 89 ) 2 9 .8 0 ( 1 .1 73 ) 4X 2 .1 0 ( .0 82 ) 1 .9 0 ( .0 75 ) 8.10 ( .3 19 ) 7.70 ( .3 03 ) 0 .25 ( .01 0 ) M C A M B M 2 .10 ( .08 2 ) 1 .90 ( .07 5 ) -C 0.1 2 ( .00 5 ) 12 .3 0 ( .4 84 ) 11 .8 0 ( .4 64 ) 2 R FULL 1 5.00 ( .5 90 ) 4 1 K1 A2 H E XF R E D G E IG B T A1 K2 3 2 C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7 L E A D A S S IG M E N T S E C 4 1 S G HEXFET S D 3 2
Tube
QUANTITY PER TU BE IS 1 0 M4 SREW AND W ASHE R IN CLUDED
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99
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