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TRIPLE INDEPENDENT LOGIC INTERFACED HALF BRIDGES
EBO1
MICROTECHNOLOGY
HTTP://WWW.APEXMICROTECH.COM
(800) 546-APEX
(800) 546-2739
FEATURES
* * * * * COMPATIBLE WITH PWM FREQUENCIES UP TO 30KHZ 50V TO 500 V MOTOR SUPPLY 20A CONTINUOUS OUTPUT CURRENT HCMOS COMPATIBLE SCHMITT TRIGGER LOGIC INPUTS SEPARATE EMITTER OUTPUTS FOR NEGATIVE RAIL CURRENT SENSE * SLEEP MODE * WIDE RANGE FOR GATE DRIVE AND LOGIC SUPPLIES
APPLICATIONS
HIGH POWER CIRCUITS FOR DIGITAL CONTROL OF: * THREE AXIS MOTION USING BRUSH TYPE MOTORS * THREE PHASE BRUSHLESS DC MOTOR DRIVE * THREE PHASE AC MOTOR DRIVE * THREE PHASE STEP MOTOR DRIVE
Hin 1 12 SD 11 Half Bridge Driver IGBT Half Bridge Output
13 14
HV1
DESCRIPTION
The EB01 consists of three independent IGBT half bridges with drivers. The drivers may be interfaced with CMOS or HCMOS level logic.
OUT1
Lin 1 10 Vcc1 9
15
E1 HVRTN1
16
Hin 2 Vss,Logic Ground
8
17 Half Bridge Driver IGBT Half Bridge Output
HV2
7
18
OUT2
Lin2 6
19 20
E2 HVRTN2
Vcc 2
5
Vdd,Logic Supply 4 Hin3 3 Half Bridge Driver Lin 3 2 IGBT Half Bridge Output 21 HV3
22
OUT3
23 24
E3 HVRTN3
Vcc 3 1
FIGURE 1. BLOCK DIAGRAM
APEX MICROTECHNOLOGY CORPORATION * TELEPHONE (520) 690-8600 * FAX (520) 888-3329 * ORDERS (520) 690-8601 * EMAIL prodlit@apexmicrotech.com
EB01
ABSOLUTE MAXIMUM RATINGS
HIGH VOLTAGE SUPPLY, HV5 OUTPUT CURRENT, peak1 OUTPUT CURRENT, continuous DRIVER SUPPLY VOLTAGE, Vcc LOGIC SUPPLY VOLTAGE, Vdd LOGIC INPUT VOLTAGE POWER DISSIPATION, internal2 THERMAL RESISTANCE TO CASE3 TEMPERATURE, pin solder, 10s TEMPERATURE, junction4 TEMPERATURE RANGE, storage OPERATING TEMPERATURE, case TEST CONDITIONS IOUT=20A; Vcc=10.8V, Vdd=5V; HV=500V, Fpwm=30kHz, L=100 H " " " " " Set by external circuitry Set by internal resistors MIN 497.3 -2.7 TYP
ABSOLUTE MAXIMUM RATINGS SPECIFICATIONS
SPECIFICATIONS
PARAMETER POSITIVE OUTPUT VOLTAGE NEGATIVE OUTPUT VOLTAGE POSITIVE EDGE DELAY RISETIME NEGATIVE EDGE DELAY FALLTIME PWM FREQUENCY INPUT IMPEDANCE
500V 28A 20A 20V 20V -0.3V to Vdd + 0.3V 179 Watts 2.1C/Watt 300C 150C -65 to +150C -25 to +85C MAX 502.7 2.7 1000 500 1000 500 30 UNITS Volts Volts n-second n-second n-second n-second kHz k-ohm
50
INPUT AND OUTPUT SIGNALS
PIN 1 2 3 4 5 6 7 8 9 10 11 12 NOTES: 1. 2. 3. 4. 5. SYMBOL Vcc3 Lin3 Hin3 Vdd Vcc2 Lin2 Vss Hin2 Vcc1 Lin1 SD Hin1 FUNCTION Gate supply 3 Low drive logic in 3 High drive logic in 3 Logic supply Gate supply 2 Low drive logic in 2 Logic ground High drive logic in 2 Gate supply 1 Low drive logic in 1 Shut down logic in High drive logic in 1 PIN 13 14 15 16 17 18 19 20 21 22 23 24 SYMBOL HV1 OUT1 E1 HVRTN1 HV2 OUT 2 E2 HVRTN2 HV3 OUT 3 E3 HVRTN 3 FUNCTION High Voltage supply 1 Section 1 output Section 1 emitter Section 1 return High voltage supply 2 Section 2 output Section 2 emitter Section 2 return High voltage supply 3 Section 3 output Section 3 emitter Section 3 return
Guaranteed but not tested. Total package power dissipation at 25C case tempterature with three outputs active. Each IGBT. Long term operation at the maximum junction temperature will result in reduced product life. Lower internal temperature by reducing internal dissipation or using better heatsinking to achieve high MTTF. Derate the High Voltage Supply Vs by -0.133% per C below 25C.
INPUT
A logic level input independently controls each IGBT in the half bridge. A logic level high turns on the IGBT; a logic level low turns it off. A common shutdown input turns off all IGBTs when high. All inputs are Schmitt triggers with the upper threshold at 2/3Vdd and the lower threshold at 1/3 Vdd. This comfortably interfaces with CMOS or HCMOS provided that the Vdd for the logic family and the EB01 are the same. TTL families may be used if a pull-up to the logic supply is added to the TTL gates driving the EBO1, and Vdd for the EB01 is the same supply as the logic supply for the TTL family. An open signal connector pulls the shut down input high and all other inputs low, insuring that all outputs are off.
However, input impedance is 50k on all inputs; therefore, if one input is open circuited a high radiated noise level could supuriousy turn on an IGBT.
OUTPUT
Each output section consists of a switching mode IGBT half bridge. Separate HV supply, emitter, and HV return lines are provided for each section. The IGBTs are conservatively rated to carry 20A. At 20A the saturation voltage is 2.7V maximum. Each IGBT has a high-speed diode connected in antiparallel. When switching an inductive load this diode will conduct, and the drop at 20A will be 2.7V maximum.
APEX MICROTECHNOLOGY CORPORATION * 5980 NORTH SHANNON ROAD * TUCSON, ARIZONA 85741 * USA * APPLICATIONS HOTLINE: 1 (800) 546-2739
TYPICAL PERFORMANCE GRAPHS
EB01
CONTINUOUS AMPS
20 1.1 CONTINUOUS AMPS, (A) 18 16 14 12 0.9 10 25 50 75 100 125 CASE TEMPERATURE, (C) -50 0 50 T (C) 100 150 Vs (NORMALIZED)
INTERNAL POWER DISSIPATION, (W)
POWER DERATING
75 65 58W 55 45 35 25
EACH ACTIVE OUTPUT TRANSISTOR
Vs RATING vs TEMPERATURE
1.0
31W
0
75 85 100 25 50 125 CASE TEMPERATURE, (C)
PACKAGE SPECIFICATIONS DIP9 PACKAGE
WEIGHT: 69 g or 2.4 oz DIMENSIONS ARE IN INCHES ALTERNATE UNITS ARE [MM]
APEX MICROTECHNOLOGY CORPORATION * TELEPHONE (520) 690-8600 * FAX (520) 888-3329 * ORDERS (520) 690-8601 * EMAIL prodlit@apexmicrotech.com
EB01
POWER SUPPLY REQUIREMENTS
SUPPLY HV1 HV2 HV3 Vcc1 Vcc2 Vcc3 Vdd VOLTAGE 50V to 500V 50V to 500V 50V to 500V 10V to 20V 10V to 20V 10V to 20V 4.5 to 20V MAX CURRENT 20A, continuous, 28A peak 20A, continuous, 28A peak 20A, continuous, 28A peak 10mA 10mA 10mA 10mA
OPERATING CONSIDERATIONS
current. (The size of the antenna.) Therefore the 1F ceramic capacitors should bypass each HV to its return right at the pins the EB01.
SHOOT THROUGH PROTECTION
IGBTs have a relatively short turn on delay, and a long turn off delay. Unlike most semiconductor devices the turn off delay cannot be improved very much by drive circuit design. Therefore, if the turn on input to an IGBT in a half bridge circuit is applied simultaneously with the turn off input to the other IGBT in that half bridge, there will be a time when both IGBTs are simultaneously on. This will short the power rails through the IGBTs, causing excessive power dissipation and very high EMI. To avoid the shoot through condition the turn on of one IGBT must be delayed long enough for the other in the same half bridge to have completely turned off. A delay of at least 1.5 -seconds is required for the EB01. This delay must be provided after turning off Lin before Hin of the same half bridge may be turned on; likewise it must be provided after turning off Hin before Lin of the same half bridge may be turned on.
HV1, HV2, and HV3 may be used independently, or may be one supply. Also Vcc1, Vcc2, and Vcc3 may be used independently or tied together. The Vdd supply must be compatible with the input logic. If a high voltage logic such as CMOS is used it may be tied with the Vcc supplies. HCMOS requires a 5V10% supply
SPECIAL CONSIDERATIONS GENERAL
The EB01 is designed to give the user maximum flexibility in a digital or DSP based motion control system. Thermal, overvoltage, overcurrent, and crossfire protection circuits are part of the user's design. Users should read Application Note 1, "General Operating Considerations;" and Application Note 30, "PWM Basics" for much useful information in applying this part. These Application Notes are in the "Power Integrated Circuits Data Book" and on line at www.apexmicrotech.com.
PROTECTION CIRCUITS
The EB01 does not include protection circuits. However, there is a shut down input which will turn off all IGBTs when at logic "1". This input may be used with user designed temperature sensing and current sensing circuits to shut down the IGBTs in the event of a detected unsafe condition. This is recommended since the IGBTs may be turned off this way even if the normal input logic or DSP programming is faulty.
GROUNDING AND BYPASSING
As in any high power PWM system, grounding and bypassing are one of the keys to success. The EB01 is capable of generating 20 kW pulses with 100 n-second rise and fall times. If improperly grounded or bypassed this can cause horrible conducted and radiated EMI. In order to reduce conducted EMI, the EB01 provides a separate power ground, named HVRTN, for each high voltage supply. These grounds are electrically isolated from the logic ground (Vss) and each other. This isolation eliminates high current ground loops. However, more than 5V offset between the grounds will destroy the EB01. Apex recommends back to back high current diodes between logic and power grounds; this will maintain isolation but keep offset at a safe level. All grounds should tie together at one common point in the system. In order to reduce radiated EMI, Apex recommends a 400 F or larger capacitor between HV and HVRTN. This capacitor should be a a switching power grade electrolytic capacitor with ESR rated at 20 kHz. This capacitor should be placed physically as close to the EB01 as possible. However, such a capacitor will typically have a few hundred milli-ohms or so ESR. Therefore, each section must also be bypassed with a low ESR 1F or larger ceramic capacitor. In order to minimize radiated noise it is necessary to minimize the area of the loop containing high frequency
START-UP REQUIREMENTS
In order for an IGBT to be turned on, the corresponding logic input signal must make its positive transition after SD has been low for at least 1 -second. The lower rail IGBT in the half bridge must be turned on for at least 2 -seconds to charge the bootstrap capacitor before the top rail IGBT can be turned on. This must be done no more than 330 -seconds prior to turning on the top rail IGBT. However, if the load pulls the output to ground, the positive rail IGBT can be turned on without first briefly turning on the negative rail IGBT. An internal floating supply is used to enhance the operation of the bootstrap bias circuit. This allows the top rail IGBTs to be held on indefinitely once turned on.
HEATSINK
The EB01 should be provided with sufficient heatsink to dissipate 179 watts while holding a case temperature of 25C when operating at 500V, 20A, 30kHz and 3 sections simultaneously providing maximum current. The dissipation is composed of conduction losses (I out xV sat ) up to 54 watts per half bridge and switching losses of about 4 watts per half bridge. The conduction losses are proportional to Iout; switching losses are proportional to HV supply voltage and to switching frequency.
This data sheet has been carefully CORPORATION * 5980 NORTH SHANNON ROAD is assumed for possible inaccuracies * USA * All specificiations HOTLINE: 1 (800) 546-2739 APEX MICROTECHNOLOGYchecked and is believed to be reliable, however, no responsibility * TUCSON, ARIZONA 85741or omissions.APPLICATIONSare subject to change without notice. EBO1U REV. B JANUARY 2001 (c) 2001 Apex Microtechnology Corporation

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