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DIM800DCM17-A000
DIM800DCM17-A000
IGBT Chopper Module
Replaces May 2001, version DS5444-2.0 DS5444-3.0 March 2002
FEATURES
s s s s
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 800A 1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s s s
Inverters Motor Controllers Traction Drives
5(E1)
1(E1)
2(C2)
6(G1)
The Powerline range of modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
7(C1) 3(C1) 4(E2)
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As: DIM800DCM17-A000 Note: When ordering, please use the whole part number.
Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (IGBT arm) Diode I2t value (Diode arm) Visol QPD Isolation voltage - per module Partial discharge - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS Tcase = 75C 1ms, Tcase = 105C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C VGE = 0V Test Conditions Max. 1700 20 800 1600 6940 120 270 4000 10 Units V V A A W kA2s kA2s V PC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (IGBT arm) Thermal resistance - diode (Diode arm) Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 40 27 8 C/kW C/kW C/kW Min. Typ. Max. 18 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Cies LM RINT SCData Input capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 1000V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM I1 I2 IF = 800A, Tcase = 125C DC tp = 1ms IF = 800A Min. 4.5 Typ. 5.5 2.7 3.4 2.2 2.0 2.3 2.0 60 20 0.27 3700 3200 Max. 1 25 4 6.5 3.2 4.0 800 1600 2.5 2.3 2.6 2.3 Units mA mA A V V V A A V V V V nF nH m A A
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 800A, VR = 900V, dIF/dt = 4000A/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1250 170 230 250 250 275 9.0 250 530 160 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 800A, VR = 900V, dIF/dt = 4000A/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1500 200 360 400 250 425 425 600 250 Max. Units ns ns mJ ns ns mJ C A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
TYPICAL CHARACTERISTICS
1800 1600 V is measured at power busbars ce
and not the auxiliary terminals
1800
Common emitter Tcase = 25C
1600 1400
Collector current, Ic - (A)
Common emitter Tcase = 125C
Vce is measured at power busbars and not the auxiliary terminals
1400
Collector current, Ic - (A)
1200 1000 800 600 400 200 0 VGE = 20V 15V 12V 10V 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-emitter voltage, Vce - (V) 4.5 5
1200 1000 800 600 400 200 0 0 VGE = 20V 15V 12V 10V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
450
Conditions: Vce = 900V 400 T = 125C c Rg = 2.2 350
800 Conditions: Vce = 900V IC = 800A Tc = 125C 600
Switching energy - (mJ)
300 250 200 150 100 50 0 0 200 400 600 Collector current, IC - (A) 800 1000 Eon Eoff Erec
Switching energy - (mJ)
400
200 Eon Eoff Erec 0 0 2 4 6 8 Gate Resistance, Rg - (Ohms) 10 12
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
1600 1400 1200
Foward current, IF - (A)
2000
Arm 3-1: Tj = 25C Arm 3-1: Tj = 125C Arm 2-4: Tj = 25C Arm 2-4: Tj = 125C
VF is measured at power busbars and not the auxiliary terminals
1800 1600
Collector current, IC - (A)
1400 Chip
1000 800 600 400
1200 1000 Module 800 600 400
200 0 0
0.5
2.0 1.0 1.5 2.5 Foward voltage, VF - (V)
3.0
3.5
Tcase = 125C 200 Vge = 15V Rg(min) = 2.2 0 1200 0 400 800 1600 Collector-emitter voltage, Vce - (V)
2000
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
1100 Freewheel Diode 1000 900
10000 Tvj = 125C, Tc = 75C
1000
Reverse current, IR - (A)
700 600 500 400 300 200 100
Antiparallel Diode
Collector current, IC - (A)
800
100 IC(max) DC tp = 50s tp = 100s tp = 1 ms
10
Tj = 125C 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000
1 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V)
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
100
Transient thermal impedance, Zth (j-c) - (C/kW )
1400
Antiparallel Diode Freewheel Diode Transistor
1200
DC collector current, IC - (A)
1000
800
10
600
400
200
1 0.001
0.01
0.1 Pulse width, tp - (s)
1
10 4 10.2356 152.6381 25.6068 111.7517 16.9243 118.8266
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
2 3 1 Ri (C/KW) 0.4391 3.1937 4.1465 i (ms) 2.8869 21.7141 0.045 Antiparallel Diode Ri (C/KW) 1.5612 5.7426 6.999 i (ms) 0.0063516 1.4746 13.9664 Freewheel Diode Ri (C/KW) 1.0725 3.8669 5.0773 i (ms) 0.006892 1.5269 15.5035 IGBT
Fig. 13 Transient thermal impedance
Fig. 15 DC current rating vs case temperature
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1050g Module outine type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM17-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5444-3 Issue No. 3.0 March 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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