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SPICE MODEL: CTA2N1P
Lead-free
CTA2N1P
COMPLEX TRANSISTOR ARRAY
Features
NEW PRODUCT
* * * *
Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Lead Free/RoHS Compliant (Note 2)
A
SOT-363 Dim A B C D F
H K M
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
Mechanical Data
* * * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking: A03, See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approx.)
Q1
CQ1 GQ2 SQ2
A03
BC
0.65 Nominal
H J K L M a
J
D
F
L
All Dimensions in mm
Q2
EQ1 BQ1 DQ2
Maximum Ratings, Total Device @ TA = 25C unless otherwise specified
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Symbol Pd RqJA Tj, TSTG Value 150 833 -55 to +150 Unit mW C/W C
Maximum Ratings, Q1, MMBT4401 NPN Transistor Element
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC
@ TA = 25C unless otherwise specified Value 60 40 6.0 600 Unit V V V mA
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element
Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current
Notes:
@ TA = 25C unless otherwise specified Value -50 -50 20 -130 Units V V V mA
Symbol VDSS VDGR Continuous Continuous VGSS ID
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
DS30295 Rev. 6 - 2
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CTA2N1P
a Diodes Incorporated
Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element
@ TA = 25C unless otherwise specified
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3)
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL
Min 60 40 6.0 3/4 3/4 20 40 80 100 40 3/4 0.75 3/4 3/4 3/4 1.0 0.1 40 1.0 250
Max 3/4 3/4 3/4 100 100 3/4 3/4 3/4 300 3/4 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 3/4
Unit V V V nA nA
Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
Ccb Ceb hie hre hfe hoe fT
pF pF kW x 10-4 3/4 mS MHz
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA, f = 100MHz
td tr ts tf
3/4 3/4 3/4 3/4
15 20 225 30
ns ns ns ns
VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element
@ TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time tD(ON) tD(OFF) 3/4 3/4 10 18 3/4 3/4 ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V Ciss Coss Crss 3/4 3/4 3/4 3/4 3/4 3/4 45 25 12 pF pF pF VDS = -25V, VGS = 0V f = 1.0MHz VGS(th) RDS (ON) gFS -0.8 3/4 .05 3/4 3/4 3/4 -2.0 10 3/4 V W S VDS = VGS, ID = -1mA VGS = -5V, ID = 0.100A VDS = -25V, ID = 0.1A BVDSS IDSS IGSS -50 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 -15 -60 -100 10 V A A nA nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V Symbol Min Typ Max Unit Test Condition
Notes: 3. Short duration pulse test used to minimize self-heating effect.
DS30295 Rev. 6 - 2
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CTA2N1P
Ordering Information
(Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel
NEW PRODUCT
Device CTA2N1P-7-F
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A03
A03 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Date Code Key Year Code Month Code Jan 1 2001 M Feb 2 March 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S Jul 7 Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D
DS30295 Rev. 6 - 2
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YM
CTA2N1P
MMBT4401 Section
200
1000
NEW PRODUCT
PD, POWER DISSIPATION (mW)
150
hFE, DC CURRENT GAIN
TA = 125C
100 TA = -25C TA = +25C
100
50
10
0 0 25 50 75 100 125 150 175 200
1 0.1 1 10
VCE = 1.0V 100 1000
TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs Ambient Temperature (Total Device)
IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current
30
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA
20
Cibo
CAPACITANCE (pF)
10
5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance
IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region
DS30295 Rev. 6 - 2
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CTA2N1P
MMBT4401 Section
1.0
NEW PRODUCT
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2
VBE(ON), BASE EMITTER VOLTAGE (V)
0.5
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
VCE = 5V TA = -50C TA = 25C
TA = 150C
0.1 TA = -50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1
DS30295 Rev. 6 - 2
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CTA2N1P
BSS84 Section
600
-1.0
TA = 25 C VGS = 5V
ID, DRAIN-TO-SOURCE CURRENT (mA)
NEW PRODUCT
500
-0.8
ID, DRAIN CURRENT (A)
4.5V
400
TA = -55 C
-0.6
TA = 25 C TA = 125 C
300
3.5V
-0.4
200
3.0V
100
2.5V
-0.2
0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Fig. 8, Drain Source Current vs. Drain Source Voltage
-0.0 0 -1 -2 -3 -4 -5 -6 -7 -8
VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 9, Drain Current vs. Gate Source Voltage
15 VGS = -10V ID = -0.13A 12
10 9 8 7 6 5 4 3 2
TA = 125 C
9
6
3
1 0 0 1 2
TA = 25 C
3
4
5
0 -50 -25 0 25 50 75 100 125 150
VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 10, On Resistance vs. Gate Source Voltage
TJ, JUNCTION TEMPERATURE (C) Fig. 11, On-Resistance vs. Junction Temperature
DS30295 Rev. 6 - 2
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CTA2N1P
BSS84 Section
25.0
NEW PRODUCT
20.0
VGS = -3.5V VGS = -3V VGS = -4.5V VGS = -5V VGS = -4V
15.0
10.0
VGS = -6V
5.0
VGS = -8V VGS = -10V
0.0 -0.0 -0.2 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 12, On-Resistance vs. Drain Current
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30295 Rev. 6 - 2
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CTA2N1P

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