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| DATA SHEET CT-32 DIAC DO-35 CASE DESCRIPTION The Central Semiconductor CT-32 Diac functions as a trigger diode with a fixed voltage reference and low breakover current. This device is manufactured in a hermetically sealed glass package to ensure high reliability. MAXIMUM RATINGS (TA=25C) Repetitive Peak On-state Current tp=20s, f=120Hz Operating and Storage Junction Temperature SYMBOL ITRM 2.0 UNITS A TJ,Tstg -40 to +125 C ELECTRICAL CHARACTERISTICS (TA=25C) SYMBOL VBO* | VBO1 - VBO2 | V VO IBO IR IP tr TEST CONDITIONS C=22nF** C=22nF** VBO & VF @ 10mA See Figure 2 C=22nF** VR = 18V See Figure 2 See Figure 3 MIN 28 5.0 5.0 50 10 0.3 2.0 MAX 36 3.0 UNITS V V V V A A A s * Both directions. **Capacitor connected in parallel with device. (SEE REVERSE SIDE) R0 CT-32 +IF DIAC 10mA IBO -V IB 0.5VBO +V V VF VBO Figure 2. Test circuit. -IF Figure 1. Voltage - Current characteristic curve. Ip 10K 200K D.U.T. 90% Vo 110V 60Hz 0.1F 20 IP CQ202-4D 10% tr Figure 2. Test circuit. Figure 3. Rise time measurement. DO-35 PACKAGE - MECHANICAL OUTLINE DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.018 0.022 0.46 0.56 0.120 0.200 3.05 5.08 0.060 0.090 1.52 2.29 1.000 25.40 DO-35 (REV: R1) A D B SYMBOL A B C D C D R1 |
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