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| PROCESS Small Signal Transistor CP257 Central TM NPN - High Voltage Darlington Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 28,250 PRINCIPAL DEVICE TYPES MPSA28 MPSA29 CMPTA29 EPITAXIAL PLANAR 20 x 20 MILS 8.0 MILS 4.9 x 4.9 MILS 6.4 x 6.4 MILS Al - 30,000A Au - 16,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003) Central TM PROCESS CP257 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003) |
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