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MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE CM300DU-12NFH IC ................................................................... 300A VCES ............................................................ 600V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 0.25 14 14 TC measured point 14 E2 G2 C2E1 E2 G2 E2 C1 6 48 0.25 CM G1 E1 6 CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-6. 5 MOUTING HOLES 25 21.5 2.5 4 18 7 18 7 18 2.8 7.5 8.5 0.5 0.5 0.5 0.5 29 +1.0 -0.5 22 LABEL 4 Feb.2004 G1 E1 15 62 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC' (Note 3) Tj Tstg Viso -- -- -- (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25C TC' = 25C*4 Conditions (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Ratings 600 20 300 600 300 600 780 1250 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A A A W W C C V N*m N*m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current (Tj = 25C) Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 300A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 300V, IC = 300A, VGE = 15V VCC = 300V, IC = 300A VGE1 = VGE2 = 15V RG = 4.2, Inductive load switching operation IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips (1/2 module) Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.1 Limits Typ. -- 6 -- 2.0 1.95 -- -- -- 1860 -- -- -- -- -- 5.5 -- -- -- 0.04 -- -- Max. 1 7 0.5 2.7 -- 83 5.4 3.0 -- 350 150 700 150 200 -- 2.6 0.16 0.24 -- 0.10*3 21 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC' measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. No short circuit capability is designed. Feb.2004 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 600 COLLECTOR CURRENT IC (A) 500 400 300 200 100 0 13 15 VGE = 20V 11 10 Tj = 25C 9.5 9 8.5 8 VGE = 15V 2.5 2 1.5 1 0.5 7.5 7 Tj = 25C Tj = 125C 0 100 200 300 400 500 600 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6 8 10 12 14 Tj = 25C EMITTER CURRENT IE (A) 5 3 2 IC = 600A IC = 300A IC = 120A 102 7 5 3 2 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 16 18 20 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies SWITCHING TIME (ns) 7 5 3 2 td(off) td(on) 101 7 5 3 2 102 7 5 3 2 Coes Cres tf tr Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 100 7 5 3 2 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 COLLECTOR CURRENT IC (A) Feb.2004 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25C 10-1 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 25C Inductive load 23 5 7 103 10-2 7 5 3 Per unit base = 2 10-2 7 5 3 2 Rth(j-c) = 0.16C/W 101 1 10 2 3 5 7 102 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse TC = 25C 10-1 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 300A 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 3 2 VCC = 200V VCC = 300V 10-1 7 5 3 2 12 8 10-2 7 5 3 Per unit base = 2 10-2 7 5 3 2 4 Rth(j-c) = 0.24C/W 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 0 0 500 1000 1500 2000 2500 TIME (s) GATE CHARGE QG (nC) Feb.2004 |
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