View CHA3063-99F00_1226134.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CHA3063
5.5-23GHz Driver Amplifier
GaAs Monolithic Microwave IC Description
The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounds.This helps simplify the assembly process. The circuit is manufactured with a PMHEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
24 20 16 Gain Rlosses & NF ( dB ) 12 8
NF dBS21
Main Feature
Broad band performance 5.5-23GHz 21dBm output power (Psat) 19dB gain, 1dB gain flatness PAE:11%@P-1dB typical Chip size : 1.33 x 0.910x 0.1mm
4 0 -4 -8
dBS11 dBS22
-12 -16 -20 -24 2 4 6 8 10 12 14
16
18
20
22
24
Frequency ( GHz )
On wafer typical measurements
Main Characteristics
Tamb = +25C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power, Pin=0dBm Min 5.5 18 +18 19 +20 160 210 Typ Max 23 Unit GHz dB dBm mA
Id_small_signal Bias current
ESD Protection : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA30632263 -20-Sept.-02 1/7 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3063
Electrical Characteristics on wafer
5.5-23GHz Driver Amplifier
Tamb = +25C, Vd1 = Vd2 =4V Vg tuned for Id=160mA (around -0.27V) Symbol
Fop G G Is P1dB Psat IP3 VSWRin VSWRout NF
Parameter
Operating frequency range Small signal gain Small signal gain flatness Reverse isolation CW output power at 1dB compression (1) Saturated Output Power (Pin=0dBm) 3 rd order intercept(2) Input VSWR Output VSWR Noise figure
Min
5.5 18
Typ
Max
23
Unit
GHz dB dB dB dBm dBm dBm
19 1.0 35
+16 +18
+18 +21 28 2.0:1 2.0:1 4.5 160 2.5:1 2.5:1 6 210
dB mA
Id_small signal Bias current
(1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vds Ids Vg Ig Vgd Pin Ta Tstg
Parameter
Drain bias voltage_small signal Drain bias current_small signal Gate bias voltage Gate bias current Maximun negative gate drain Voltage (Vg-Vd) Maximum continuous input power Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Values
5.0 210 -2 to +0.4 0.7 -5 +1 +15 -40 to +85 -55 to +125
Unit
V mA V mA V dBm dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref : DSCHA30632263 -20-Sept.-02
2/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5.5-23GHz Driver Amplifier
Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA.
CHA3063
Typical Scattering Parameters ( On wafer Sij measurements)
FREQ GHz 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 19,0 20,0 21,0 22,0 23,0 24,0 25,0 26,0 27,0 28,0 29,0 30,0
S11 dB -0,3 -0,7 -3,4 -5,7 -7,9 -9,0 -11,3 -13,5 -14,3 -14,0 -13,2 -13,2 -15,3 -16,7 -21,2 -18,6 -19,8 -18,8 -20,8 -19,8 -15,4 -14,2 -11,5 -11,6 -3,9 -2,0 -1,3 -1,3 -1,3 -1,2
S11 / -35,6 -75,6 -113,7 -140,7 -170,3 162,5 121,8 82,5 39,7 0,9 -34,0 -62,6 -95,8 -125,2 -125,5 -140,0 -124,7 -172,0 101,6 23,1 -14,7 -34,2 -43,5 -30,9 -46,7 -74,8 -99,2 -115,8 -128,4 -140,1
S12 dB -60,9 -63,1 -54,5 -53,1 -43,5 -44,2 -41,0 -38,7 -37,6 -37,1 -36,7 -35,6 -36,0 -35,0 -34,7 -36,4 -36,4 -38,5 -37,4 -35,2 -34,0 -33,8 -35,3 -33,1 -34,9 -35,3 -39,7 -33,9 -32,3 -28,7
S12 / 84,0 142,8 -53,2 138,2 67,4 34,7 13,6 -16,7 -39,6 -61,4 -82,9 -107,7 -126,6 -148,4 -175,9 170,4 137,3 135,9 154,6 125,8 101,5 71,7 46,5 -0,4 -86,0 -172,0 157,6 138,6 128,4 96,4
S21 dB -12,7 -13,7 11,6 15,2 16,4 18,8 19,3 18,9 19,1 19,3 19,5 19,6 19,5 19,2 18,5 18,2 18,1 18,1 18,0 18,0 18,2 18,9 19,5 20,4 17,6 10,9 3,9 -3,5 -12,1 -21,0
S21 / 86,9 -179,2 123,1 58,5 19,0 -12,3 -46,9 -75,2 -100,4 -125,2 -150,7 -175,1 159,3 133,1 111,1 89,1 70,4 44,3 22,0 -2,5 -26,4 -57,7 -89,3 -144,0 153,9 104,5 69,9 44,6 29,3 47,7
S22 dB -0,6 -1,4 -4,7 -6,2 -7,4 -11,1 -12,0 -11,6 -12,9 -14,4 -13,7 -13,5 -11,9 -11,9 -13,1 -14,7 -19,5 -17,4 -18,5 -19,4 -23,3 -21,4 -16,9 -6,3 -3,1 -3,2 -4,3 -4,7 -5,0 -5,9
S22 / -35,0 -67,7 -93,2 -111,6 -133,3 -149,1 -155,1 -173,2 171,7 165,8 164,9 148,9 131,3 116,0 95,0 79,9 72,4 72,2 57,4 47,4 32,5 76,8 77,6 46,6 -13,3 -59,0 -90,9 -113,7 -133,9 -153,6
Ref : DSCHA30632263 -20-Sept.-02
3/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3063
Bias Conditions :
5.5-23GHz Driver Amplifier
Vd1,2= 4V, Vg = -0.27V, Id = 160 mA
Typical ON JIG MEASUREMENTS (deembedded)
GAIN & RLOSS MEASUREMENTS IN TEST JIG
25
S21
19 13 Gain/Rlosses (dB) 7 1 -5
S22
-11 -17
S11
-23 -29 -35 1 3 5 7 9 11 13 15 17 19 21 23 25 27 FREQ (GHz)
POWER MEASUREMENTS IN TEST JIG (deembedded) 30
Linear Gain Psat (Glin-3dB) 25
25
OUTPUT POWER (dBm) / PAE
20
20
P-1dB
15 Gain (dB)
15
PAE @ 1 db compression
10
10
5
5
0
0 4 6 8 10 12 14
FREQ (GHz)
-5
16
18
20
22
24
Ref : DSCHA30632263 -20-Sept.-02
4/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5.5-23GHz Driver Amplifier
CHA3063
Typical ON JIG POWER MEASUREMENTS (deembedded)
Bias Conditions :
25
Vd1,2= 4V, Vg = -0.27V, Id = 160 mA
FREQ: 6 GHz
500 450
Pout (dBm) / Gain (dB) / PAE (%)
20
Gain
400 350
15
300 250 Id (mA)
IM3(dBc)
10
Pout
200
Id
150
PAE
5
100 50
0 -16 -14 -12 -10 -8 -6
Pin (dBm)
0
-4
-2
0
2
4
FREQ: 20GHz 25
500 450 Pout (dBm) / Gain (dB) / PAE (%)
20
Gain
400 350 300 250 Pout 200 150 Id Id(mA)
15
10
5
PAE
100 50
0 -16 -14 -12 -10 -8 -6
Pin (dBm)
0
-4
-2
0
2
4
CHA3063
V d=4V
Id=160mA @ 23.5GHz f=10MH z IP3 # 28.5dBm 85 75 65
35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -16 -14 -12
Fundamental 3rd order
Output power (dB)
55 45
IM3
H3 H1 F2 + ( F2-F1 ) Df=10MHz F2 Df=10MHz IM3
35 25 15 5 -5
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Input power (dBm)
Ref : DSCHA30632263 -20-Sept.-02
5/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3063
Chip Assembly and Mechanical Data
5.5-23GHz Driver Amplifier
Note :Supply recommended
feed
should
be
capacitively
bypassed.
25m
diameter
gold
wire
is
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers)
Ref : DSCHA30632263 -20-Sept.-02 6/7 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3063
5.5-23GHz Driver Amplifier
Ordering Information
Chip form : CHA3063-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref : DSCHA30632263 -20-Sept.-02
7/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

▲Up To Search▲

Price & Availability of CHA3063-99F00

	To Download CHA3063-99F00 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .