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| Glass Passivated Sintered Fast Recovery Rectifier COMCHIP www.comchip.com.tw CFPA10MD Reverse Voltage: 1200 Volts Forward Current: 1.0 Amp Features DO-214AC (SMA) - Glass passivated cavity-free junction - Ideal for surface mount automotive application - Plastic package has Underwriters Lab. flammability classification 94V-0 - Built-in strain relief - High temperature soldering guaranteed: 350 degree C/10sec, at terminals - For use in high frequency rectifier circuits 0.067(1.70) 0.051(1.29) 0.180(4.57) 0.160(4.06) 0.110(2.79) 0.086(2.18) 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) Mechanical data Case: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Weight:0.064 gram 0.209(5.31) 0.185(4.70) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics Parameter Max.RepetitivePeak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave Sine-wave superimposed on Rate load ( JEDEC ) Max. AverageForward Current Max. Instantaneous Forward Current at 1.0 A Reverse Recovery Time Max. DC Reverse Current at rated DC Blocking Voltage Ta=25 C Ta=125 C Max. Thermal Resistance (Note 1) Operating Junction temperature Storage Temperature Symbol VRRM VDC VRMS IFSM CFPA10MD 1200 1200 840 20 Unit V V V A Io VF 1.0 1.8 A V nS uA Trr 300 IR R 5 50 65 -55 to +175 -55 to +175 C/W C C JA Tj TSTG Note 1: Thermal resistance from junction to ambient at 0.375 (9.5 mm) lead lengths, P.C. B. Mounted. MDS0303007A Page 1 Glass Passivated Sintered Fast Recovery Rectifier COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CFPA10MD) Fig. 1 - Reverse Characteristics 100 100 Fig.2 - Forward Characteristics Reverse Current ( uA ) 10 Forward Current ( A ) Tj=125 C Tj=25 C Pulse width=300us 1% duty cycle 10 1 Tj=75 C Tj=25 C 1.0 0.1 0.1 0.01 0.01 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 2.4 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance 10 25 Fig. 4 - Non Repetitive Forward Surge Current Peak Surge Forward Current ( A ) 8.3mS Single Half Sine Wave JEDEC methode Junction Capacitance (pF) 6 Tj=25 C 4 20 15 Tj=25 C 10 2 5 0 1 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 1.4 Average Forward Current ( A ) trr | | | | | | | | 1.2 1.0 0.8 0.6 0.4 0.2 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0303007A Page 2 |
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