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| SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0520 Io = 500 mA VR = 20 Volt s Features Low forward Voltage (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: SOD-323F (2512) Standard package , molded plastic. 0.051(1.30) 0.043(1.10) 0.035(0.90) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.006 gram (approximately). 0.027(0.70) 0.020(0.50) Typ. 0.012 (0.30) Typ. 0.020(0.50) Typ. Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit VRM VR Io IFSM TSTG Tj -40 -40 30 20 0.5 2 +125 +125 V V A A C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals IF = 100mA IF = 500mA VR = 20V f = 1MHz, and 0 VDC reverse voltage Conditions Symbol Min Typ Max Unit VF VF IR CT 100 0.36 0.47 100 V V uA pF REV:A QW-A1038 Page 1 SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBF0520) Fig. 1 - Forward characteristics 1000 100m COMCHIP SMD Diodes Specialist Fig. 2 - Reverse characteristics Forward current (mA ) 10m Reverse current ( A ) 100 C 100 1m 75 C 100u 25 C C 125 -2 5 75 25 10 C C C 10u 1u 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1u 0 5 -25 C 10 15 20 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals(pF) 60 120 Fig. 4 - Current derating curve Average forward current ( % ) f=1MHz Ta = 25 C 50 100 40 80 30 60 20 40 10 20 0 0 5 10 15 20 0 0 25 50 75 100 125 150 Reverse voltage : (V) Ambient temperature ( C ) REV:A QW-A1038 Page 2 |
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