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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D189 BY584 High-voltage soft-recovery rectifier Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification High-voltage soft-recovery rectifier FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Soft-recovery switching characteristics * Compact construction. APPLICATIONS * Grid 2 supply in colour television picture tubes * High-voltage applications for: - High frequencies - Switching applications. The cathode lead is marked with an orange band. k handbook, halfpage a BY584 expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of MAM162 Fig.1 Simplified outline (SOD61A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VRW IF(AV) PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage working reverse voltage average forward current averaged over any 20 ms period; Ttp = 25 C; lead length = 10 mm; see Fig.2; see also Fig.4 averaged over any 20 ms period; Tamb = 60 C; PCB mounting (see Fig.6); see Fig.3; see also Fig.4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current t 10 ms; half sinewave; Tj = Tj max prior to surge; VR = VRWmax CONDITIONS MIN. - - - - MAX. 1800 1800 1500 85 V V V mA UNIT - 50 mA - - 800 5 mA A Tstg Tj storage temperature junction temperature -65 -65 +120 +120 C C 1996 Sep 26 2 Philips Semiconductors Product specification High-voltage soft-recovery rectifier ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF IR Qr PARAMETER forward voltage reverse current recovery charge CONDITIONS IF = 100 mA; Tj = Tj max; see Fig.5 VR = VRWmax; Tj = Tj max when switched from IF = 100 mA to VR 100 V and dIF/dt = -200 mA/s; see Fig.7 when switched from IF = 100 mA to VR 100 V and dIF/dt = -200 mA/s; see Fig.7 when switched from IF = 100 mA to VR 100 V and dIF/dt = -200 mA/s; see Fig.7 VR = 0 V; f = 1 MHz MIN. - - - TYP. - - - BY584 MAX. 8.5 3 1 V UNIT A nC tf fall time 100 - - ns trr reverse recovery time - 200 - ns Cd diode capacitance - 2 - pF THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.6. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 100 155 UNIT K/W K/W 1996 Sep 26 3 Philips Semiconductors Product specification High-voltage soft-recovery rectifier GRAPHICAL DATA 100 MBH399 BY584 handbook, halfpage handbook, halfpage 100 MBH400 IF(AV) (mA) 80 IF(AV) (mA) 80 60 60 40 40 20 20 0 0 40 80 Ttp (C) 120 Switched mode application. a = 1.42; = 0.5; VR = VRWmax; lead length = 10 mm. 0 0 40 80 Tamb (C) 120 Switched mode application. a = 1.42; = 0.5; VR = VRWmax; device mounted as shown in Fig.6. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 1000 MBH401 handbook, halfpage 200 MBH402 a = 3 2.5 2 1.57 1.42 P (mW) IF (mA) 500 100 0 0 80 IF(AV) (mA) 100 0 0 10 VF (V) 20 a = IF(RMS)/IF(AV); = 0.5; VR = VRWmax. Dotted line: Tj = 120 C. Solid line: Tj = 25 C. Fig.4 Maximum steady state power dissipation (forward plus leakage losses) as a function of average forward current. Fig.5 Forward current as a function of maximum forward voltage. 1996 Sep 26 4 Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY584 handbook, halfpage 50 25 handbook, halfpage I F 7 50 dI F dt t rr 10% t 2 3 IR MGA200 Qr 90% tf MGD569 Dimensions in mm. Fig.6 Device mounted on a printed-circuit board. Fig.7 Reverse recovery definitions. APPLICATION INFORMATION handbook, full pagewidth VI VIM = 1500 V VI horizontal deflectiontransformer D1 VO 1 M to g2 0 11.5 s 64 s t 150 nF VO VOM VO(AV) = 1500 V MBH419 0 t D1 = BY584. Stable continuous operation is ensured at ambient temperatures up to 70 C. Fig.8 Basic circuit and waveforms for grid 2 voltage supply in colour television picture tubes. 1996 Sep 26 5 Philips Semiconductors Product specification High-voltage soft-recovery rectifier PACKAGE OUTLINE BY584 k handbook, full pagewidth a 0.6 3 max 2.5 max 32.5 min 4.9 max 32.5 min MGD603 Dimensions in mm. The marking band indicates the cathode. Fig.9 SOD61A. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 26 6 |
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