 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features * 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.600 (BUZ73 field effect transistor designed for applications such as * SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching * Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. 5.8A, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. 00V, * High Input Impedance .600 Formerly developmental type TA4600. * Majority Carrier Device hm, N* Related Literature hannel Ordering Information - TB334 "Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND ower Components to PC Boards" BUZ73A TO-220AB BUZ73A OSNOTE: When ordering, use the entire part number. ET) Symbol /Author D ) /KeyG ords Harris S emionducor, Nhannel Packaging ower JEDEC TO-220AB OSSOURCE ET, DRAIN GATE ODRAIN (FLANGE) 20AB) /Creator ) /DOCIN O pdfark /Pageode /UseOutines /DOCIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ73A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ76A 200 200 5.8 23 20 40 0.32 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 30oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 200V, VGS = 0V TJ = 125oC, VDS = 200V, VGS = 0V VGS = 20V, VDS = 0V ID = 3.5A, VGS = 10V (Figure 8) VDS = 25V, ID = 3.5A (Figure 11) VCC = 30V, ID 2.8A, VGS = 10V, RGS = 50, RL = 10. (Figures 14, 15) MIN 200 2.1 2.2 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) TYP 3 20 100 10 0.5 3.5 15 40 70 40 450 100 50 3.1 75 MAX 4 250 1000 100 0.600 20 60 90 55 600 160 80 UNITS V V A A nA S ns ns ns ns pF pF pF oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulsed Source to Drain Current Drain to Source Diode Voltage Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL ISD ISDM VSD trr QRR TJ = 25oC, ISD = 11.6A, VGS = 0V TJ = 25oC, ISD = 5.8A, dISD/dt = 100A/s, VR = 100V TC = 25oC TEST CONDITIONS MIN TYP 1.4 200 0.6 MAX 5.8 23 1.7 UNITS A A V ns C 2 BUZ73A Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) Unless Otherwise Specified 6 VGS 10V 5 4 3 0.6 0.4 2 1 0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 18. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 19. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE 0.5 1 0.2 0.1 0.05 0.02 0.01 0 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.01 10-5 10-4 10-1 10-3 10-2 tp, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 20. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) 1s 101 10s 100s 100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 15 PD = 40W 7.5V 8.0V 10V 20V VGS = 7.0V PULSE DURATION = 80s TJ = 25oC 10 VGS = 6.5V VGS = 6.0V VGS = 5.5V 1ms 10ms 100ms DC 102 103 5 VGS = 5.0V VGS = 4.5V VGS = 4.0V 0 0 5 25 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 10-1 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 21. FORWARD BIAS SAFE OPERATING AREA FIGURE 22. OUTPUT CHARACTERISTICS 3 BUZ73A Typical Performance Curves IDS(ON), DRAIN TO SOURCE CURRENT (A) 15 PULSE DURATION = 80s VDS = 25V TJ = 25oC Unless Otherwise Specified (Continued) 3 rDS(ON), ON STATE RESISTANCE () PULSE DURATION = 80s 10 2 VGS = 5V 5.5V 6V 6.5V 5 1 7V 7.5V 8V 9V 10V 20V 0 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 0 5 10 ID, DRAIN CURRENT (A) 15 FIGURE 23. TRANSFER CHARACTERISTICS FIGURE 24. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT VGS(TH), GATE THRESHOLD VOLTAGE (V) 50 100 150 2.0 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () PULSE DURATION = 80s ID = 3.5A VGS = 10V 4 VDS = VGS, ID = 1mA 1.5 3 1.0 2 0.5 1 0 -50 0 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 25. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 26. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 5 gfs, TRANSCONDUCTANCE (S) 40 VGS = 0, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGS 4 PULSE DURATION = 80s VDS = 25V TJ = 25oC C, CAPACITANCE (nF) 100 CISS 3 10-1 2 COSS CRSS 1 10-2 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 0 5 10 ID, DRAIN CURRENT (A) 15 FIGURE 27. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 28. TRANSCONDUCTANCE vs DRAIN CURRENT 4 BUZ73A Typical Performance Curves 102 ISD, SOURCE TO DRAIN CURRENT (A) Unless Otherwise Specified (Continued) 15 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80s ID = 10.5A 101 10 VDS = 40V VDS = 160V 100 TJ = 150oC TJ = 25oC 5 10-1 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 3.0 0 0 5 10 15 20 25 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 29. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 30. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 31. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) FIGURE 32. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0 FIGURE 33. GATE CHARGE TEST CIRCUIT FIGURE 34. GATE CHARGE WAVEFORMS 5 |
Price & Availability of BUZ73A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |