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CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No. : 1/4
BTB1386N3
Features
* Excellent DC current gain characteristics * Low Saturation Voltage, VCE(sat)=-0.25V(typ)
Applications
* Low frequency amplifier * Driver
Symbol
BTB1386N3 SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note 1: Single pulse, Pw10ms, Duty Cycle30%.
Symbol VCBO VCEO VEBO IC ICP Pd RJA Tj Tstg
Limits -15 -12 -6 -4 -8 225 556 150 -55~+150
Unit V V V A mW C/W C C
BTB1386N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. -15 -12 -6 200 180 150 Typ. 250 60 Max. -100 -100 -0.25 820 Unit V V V nA nA V MHz pF
Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No. : 2/4
Test Conditions IC=-50A IC=-1mA IE=-50A VCB=-15V VEB=-5V IC=-1A, IB=-50mA VCE=-2V, IC=-20mA VCE=-2V, IC=-500mA VCE=-2V, IC=-2A VCE=-2V, IC=-200mA, f=100MHz VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE 2
Rank Range R 180~390 S 270~560 T 390~820
BTB1386N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000 Saturation voltage---(mV)
VCE = 2V
Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No. : 3/4
Saturation voltage vs Collector current
1000
VCE(sat)
Current gain---HFE
100
IC=40IB
10
IC=10IB IC=20IB
100 1 10 100 1000 Collector current---IC(mA) 10000
1 1 10 100 1000 Collector current---IC(mA) 10000
Saturation votlage vs Collector current
10000 Saturation Voltage---(mV)
VBE(sat)@IC=20IB
On voltage vs Collector Current
1000
1000
100 1 10 100 1000 10000 Collector Current---IC(mA)
On Voltage---(mV) 100 1 10 100 1000 Collector Current---IC(mA) 10000
Power Derating Curve
250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA() 200
BTB1386N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No. : 4/4
A L 3 B 1 2 S
Marking:
TE BH
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J *: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1386N3
CYStek Product Specification

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