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SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K38 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS138 50 50 20 200 300 417 -55 to +150 Units V V V mA mW C/W C Source Gate Drain J E G TOP VIEW S D G H K L D B C A SOT-23 Dim A B C D M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data E G H J K L M a All Dimensions in mm Maximum Ratings Drain-Source Voltage Characteristic Drain-Gate Voltage RGS 20KW Gate-Source Voltage Drain Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 50 3/4 3/4 0.5 3/4 100 3/4 3/4 3/4 3/4 3/4 Typ 75 3/4 3/4 1.2 1.4 3/4 3/4 3/4 3/4 3/4 3/4 Max 3/4 0.5 100 1.5 3.5 3/4 50 25 8.0 20 20 Unit V A nA V W mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RGEN = 50W VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 250mA VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0KHz 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30144 Rev. 11 - 2 1 of 5 www.diodes.com BSS138 a Diodes Incorporated Ordering Information Device BSS138-7-F Notes: (Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K38 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 0.6 Tj = 25C 2000 L March 3 2001 M Apr 4 YM K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D VGS = 3.5V ID, DRAIN-SOURCE CURRENT (A) 0.5 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0.8 ID, DRAIN-SOURCE CURRENT (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics VDS = 1V -55C 25C 150C DS30144 Rev. 11 - 2 2 of 5 www.diodes.com BSS138 2.45 2.25 2.05 1.85 1.65 1.45 1.25 1.05 0.85 0.65 -55 -5 45 95 145 VGS = 4.5V ID = 0.075A VGS = 10V ID = 0.5A Tj, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 ID = 1.0mA Tj, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature RDS(ON), DRAIN-SOURCE ON RESISTANCE (W) 8 7 6 5 4 3 -55C 25C VGS = 2.5V 150C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 11 - 2 3 of 5 www.diodes.com BSS138 9 8 7 6 5 4 3 2 1 0 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current -55C 25C VGS = 2.75V 150C 6 VGS = 4.5V 5 150C 4 3 2 25C 1 -55C 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 3.5 VGS = 10V 3 150C 2.5 2 1.5 1 25C -55C 0.5 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 11 - 2 4 of 5 www.diodes.com BSS138 1 ID, DIODE CURRENT (A) 0.1 150C -55C 0.01 25C 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 100 VGS = 0V f = 1MHz C, CAPACITANCE (pF) CiSS 10 COSS CrSS 1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30144 Rev. 11 - 2 5 of 5 www.diodes.com BSS138 |
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