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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 BS170P D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 60 270 3 20 625 -55 to +150 UNIT V mA A V mW C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current SYMBOL BV DSS V GS(th) I GSS I DSS MIN. 60 0.8 3 10 0.5 5 200 TYP. MAX. UNIT V V nA A mS CONDITIONS. I D=100A, V GS=0V I D=1mA, V DS=V GS VGS=15V, V DS=0V V GS=0V, V DS=25V V GS=10V, I D=200mA V DS=10V, I D=200mA Static Drain-Source R DS(on) on-State Resistance (1) Forward g fs Transconductance (1)(2) Input Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3) C iss t (on) t (off) 60 10 10 pF ns ns V GS=0V, V DS=10V f=1MHz V DD15V, I D=600mA (1) Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% (2) Sample test (3) Switching times measured with a 50 source impedance and <5ns rise time on a pulse generator 3-27 |
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