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| BIPOLARICS, INC. Part Number BPT1819E03 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: Bipolarics' BPT1819E03 is a high performance silicon bipolar transistor intended for linear power applications at frequencies of 1.8 to 1.9 GHz. Typical applications include amplifiers in aeronautical, maritime and personal communication applications. The BPT1819E03 is bonded common emitter for linear applications. Linear output power of 3 Watts can be achieved. BeO flange packaging makes this device excellent for industrial and military products. Uniformity and reliability are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization. * * * * * High Output Power 3 W @ 1.8 GHz High Gain Bandwidth Product f = 6.0 GHz typ @ I C = 480 mA t High Gain GPE = 10.0 dB @ 1.8 GHz Gold Metallization System High thermal efficiency BeO 6 Lead Flange package (package 36) Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS PERFORMANCE DATA: * Electrical Characteristics (TA = 25oC) SYMBOL PARAMETERS & CONDITIONS VCES VCEO VEBO IC T J TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Thermal Resistance 40 20 3.0 960 200 -65 to 200 11 V V V mA o C o C C/W JC UNIT MIN. TYP. MAX. VCE = 15V, I C = 480 mA, Class A,Common Emitter unless stated BVCEO Collector-Emitter Breakdown Voltage IC = 0.1 mA V 20 P1dB GPE Output Power at 1dB compression Class A POUT = 4 W Efficiency: f = 1.8 GHz f = 1.8 GHz W dB 3.0 10.0 hFE CCB Class A Class C f = 1.0 MHz % 30 65 20 60 100 Forward Current Transfer Ratio: VCE = 8.0V, IC = 400 mA Collector Base Capacitance: f = 1.0 MHz IE = 0 pF 8.0 PT Total Power Dissipation W 12 |
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