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| SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 7 COMPLEMENTARY TYPE - BFN19 PARTMARKING DETAIL - DE BFN18 C E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 300 300 5 500 200 100 1 -65 to +150 B UNIT V V V mA mA mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 30 Typ. 70 Typ. 1.5 MHz pF MIN. 300 300 5 100 20 100 0.5 0.9 MAX. V V V nA A nA V V UNIT CONDITIONS. I C=100A I C=1mA* I E=100A V CB=250V V CB=250V, T amb=150C V EB=3V I C=20mA, I B=2mA I C=20mA, I B=2mA I C=1mA, V CE=10V* I C=10mA, V CE=10V* I C=30mA, V CE=10V* I C=20mA, V CE=10V f=20MHz V CB=30V,f=1MHz fT C obo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 44 |
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