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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD034 TRANSISTOR (PNP) TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25) 2. COLLECTOR 3. BASE Collector current ICM: -2.5 A Collector-base voltage V(BR)CBO: -110 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE(sat) VBE 123 unless Test otherwise conditions specified) MIN TYP MAX UNIT Ic=-100A, IE=0 Ic=-10mA, IB=0 IE=-100A, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-1.5A IC=-2A, IB=-200mA VCE=-5V, IC=-500mA VCE=-1V, IC=-250mA, f=1MHz -110 -80 -7 -1 -1 100 40 -0.5 -1 3 560 V V V A A V V MHz fT CLASSIFICATION OF Rank Range hFE(1) R 100-200 S 140-280 T 200-400 U 280-560 TypicalCharacteristics BD034 |
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