Part Number Hot Search : 
RSF014N 100MS NACK22M 567X6 RU60E25L 1E106 PR5262X ZM2CR60W
Product Description
Full Text Search
 

To Download BAS716 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAS716 Low-leakage diode
Product specification 2003 Nov 07
Philips Semiconductors
Product specification
Low-leakage diode
FEATURES * Plastic SMD package * Low leakage current: typ. 0.2 nA * Switching time: typ. 0.6 s * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA. APPLICATION * Low leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in an ultra small SOD523 (SC-79) SMD plastic package. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BAS716 - DESCRIPTION plastic surface mounted package; 2 leads PINNING
BAS716
handbook, halfpage1
Marking code: S1. The marking bar indicates the cathode.

1 2
Top view
PIN
DESCRIPTION cathode anode
2
MAM408
Fig.1
Simplified outline (SOD523; SC-79) and symbol.
VERSION SOD523
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 tp = 1 s tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 4 1 0.5 250 +150 150 A A A mW C C see Fig.2; note 1 CONDITIONS - - - - MIN. MAX. 85 75 200 500 UNIT V V mA mA
2003 Nov 07
2
Philips Semiconductors
Product specification
Low-leakage diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current VR = 75 V VR = 75 V; Tj = 150 C VR = 100 V Cd trr diode capacitance reverse recovery time VR = 0 V; f = 1 MHz; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA CONDITIONS TYP. 0.77 0.85 0.92 1.02 0.2 3 0.3 2 0.6 1 1.1
BAS716
MAX. 0.9 V V V V
UNIT
1.25 5 80 - - 3
nA nA nA pF s
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions. 2. Soldering point of the cathode tab. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 note 2 VALUE 450 120 UNIT K/W K/W
2003 Nov 07
3
Philips Semiconductors
Product specification
Low-leakage diode
GRAPHICAL DATA
MHC323
BAS716
handbook, halfpage
300
handbook, halfpage
300
MLB752 - 1
IF (mA)
IF (mA) 200
(1) (2) (3)
200
100
100
0 0 100 Tamb (C) 200
0 0 0.4 0.8 1.2 V F (V) 1.6
Device mounted on a FR4 printed-circuit board.
(1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 10
102
103
tp (s)
104
Based on square wave currents; Tj = 25 C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Nov 07
4
Philips Semiconductors
Product specification
Low-leakage diode
BAS716
102 handbook, halfpage IR (nA) 10
(1)
MDB826
handbook, halfpage
2.0
MDB827
Cd (pF) 1.5
1.0
(2)
1 0.5
10-1
0
50
100
150
Tj (C)
200
0 0 5 10 15 V (V) 20 R
VR = 75 V. (1) Maximum values. (2) Typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05; Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2003 Nov 07
5
Philips Semiconductors
Product specification
Low-leakage diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
BAS716
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.65 0.58 bp 0.34 0.26 c 0.17 0.11 D 1.25 1.15 E 0.85 0.75 HE 1.65 1.55 v 0.1
(1)
Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 98-11-25 02-12-13
2003 Nov 07
6
Philips Semiconductors
Product specification
Low-leakage diode
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BAS716
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Nov 07
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp8
Date of release: 2003
Nov 07
Document order number:
9397 750 11999


▲Up To Search▲   

 
Price & Availability of BAS716

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X