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LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES * Ultra small plastic SMD package * Low diode capacitance: max. 1.05 pF * Low diode forward resistance: max. 0.7 * Small inductance. APPLICATIONS * Low loss band-switching in VHF television tuners * Surface mount band-switching circuits. DESCRIPTION The BA891 is a planar, high performance band-switching diode in the ultra small SOD523 SMD plastic package.
BA 891
1
2
SOD523 SC-79
1 CATHODE
2 ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR I IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. - - - -65 -65 MAX. 35 100 715 +150 +150 UNIT V mA mW C C
T s =90C
ELECTRICAL CHARACTERISTICS T j = 25C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =10 mA V R =30 V f = 1 MHz; note 1; see Fig.1 V R= 1 V V R= 3 V r D diode forward resistance f = 100 MHz; note 1; see Fig.2 I F = 3 mA I F = 10 mA L
S
TYP. - - 0.8 0.65 0.45 0.36 0.6
MAX. 1 20 1.05 0.9 0.7 0.5 -
UNIT V nA pF pF nH
series inductance
Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W
S21-1/2
LESHAN RADIO COMPANY, LTD.
BA 891
1
10
0.8
C d (pF)
0.6
r D( )
1 f = 1 MHz; T j =25C 0 10 20 30 f = 100 MHz; T j =25C 10 -1 10 -1
0.4
0.2
0
1
10
V
R
(V)
I F (mA )
Fig.1 Diode capacitance as a function of reverse voltage; typical values.
Fig.2 Diode forward resistance as a function of forward current; typical values.
S21-2/2

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