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Common Source Push-Pull Pair ARF450 ARF450 BeO 11405 RF POWER MOSFET Specified 150 Volt, 81.36 MHz Characteristics: Output Power = 500 Watts. Gain = 13dB (Class C) Efficiency = 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C N - CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. High Performance Push-Pull RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25C unless otherwise specified. ARF450 UNIT Volts Amps Volts Watts C 450 450 11 30 650 -55 to 200 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts A nA mhos 500 5 25 250 100 3 0.9 3 5.8 1.1 5 (ID(ON) = 5.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5.5A) Forward Transconductance Ratio (VDS = 25V, ID = 5.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) Delta Gate Threshold Voltage (VDS = VGS, ID = 50mA) / VGS(TH) VGS(TH) 0.1 Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic (per package unless otherwise noted) Junction to Case (per section) Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT 050-4910 Rev C 12-2000 0.54 0.1 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA: EUROPE: 405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382 - 8028 FAX: (541) 388 -0364 Chemin de Magret Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS (per section) Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (Push-Pull Configuration) ARF450 Test Conditions VGS = 0V MIN TYP MAX UNIT 980 87 25 5 3.0 15 3 1200 120 40 10 7 25 7 ns pF VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Test Conditions f = 81.36 MHz VGS = 0V VDD = 150V Pout = 500W MIN TYP MAX UNIT dB % Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 12 70 13 75 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per each transistor side unless otherwise specified. 30 25 20 GAIN (dB) Pout = 150W CAPACITANCE (pf) Class C VDD = 150V 3000 Ciss 1000 500 15 10 5 0 30 Coss 100 50 Crss 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 10 16 ID, DRAIN CURRENT (AMPERES) TJ = -55C ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 50 OPERATION HERE LIMITED BY RDS (ON) 100us 12 10 5 1ms 8 10ms 1 0.5 TC =+25C TJ =+200C SINGLE PULSE 100ms 050-4910 Rev C 12-2000 4 TJ = +125C TJ = -55C TJ = +25C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics 0.1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 1.2 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ARF450 ID, DRAIN CURRENT (AMPERES) 25 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 20 VGS=8, 10 & 15V 6.5V 6V 15 10 5.5V 5V 4.5V 5 0 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics VGS = 0 VDD = 150V POUT, POWER OUT (WATTS) 450 f = 81.36 MHz Push-Pull GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 600 14 12 VGS = 0 VDD = 150V f = 81.36 MHz Push-Pull 300 10 150 8 0 0 12 18 24 30 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 6 150 300 450 600 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 6 0 0.6 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 .05 0.2 0.1 0.05 Note: PDM .01 .005 0.02 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC Z JC .001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 10 Table 1 - Typical Class C Large Signal Input-Output Impedance (per section) Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 80.0 100.0 Z in () 23.00 - j 7.0 4.30 - j 9.1 1.00 - j 4.2 0.42 - j 1.7 0.35 + j 1.1 0.56 + j 2.5 0.90 + j 3.8 Z OL () 93.0 - j 10 63.0 - j 43 32.0 - j 43 17.5 - j 34 7.7 - j 22 5.1 - j 16 3.4 - j 12 Z in - gate shunted by 25 Z OL - conjugate of optimum load impedance for 150W at 150V 050-4910 Rev C 12-2000 L5 L3 R1 100 J1 T1 C5 C6 C7 + 150V - ARF450 C1 75-380 pF ARCO 465 C2 25-115 pF ARCO 462 C3 -C5 2 nF NPO 500V chip C6 10 nF 500V chip C7 .47 uF Ceramic 500V L1-L2 50 nH 3t # 14 ga .3" dia L3-L4 .68 uH 12t #24 enam L5 2t #20 on bead approx 2 uH R1-R2 100 ohm 1 W T1 9:1 RF transformer T2 1:1 coax balun TL1-TL2 Printed line 1" long TL1 L1 C3 J2 C1 TL2 L2 R2 100 DUT L4 C2 T2 C4 81.36 MHz Test Circuit R1 6.8K + Bias 0-6V R4 10K + C1 1 C2 10n C3 .47 L3 + 80 V T1 9:1 RF Transformer on type 43 beads T2 4:1 RF Transformer. Made from two pieces of 25 ohm semi-rigid coax with type 43 ferrite bead loading. J2 T1 J1 R8 20 10W DUT C6 50p C4 .1 T2 C5 1n 30 MHz Linear Test Circuit .875 .176 Typical Mounting 1 HAZARDOUS MATERIAL WARNING ARF450 BeO 11405 .375 1 ARF450 .582 BeO 11405 6 5,8 7 .062 .375 8 .005 .125 .210 .060 typ. .210 .125 dims: inches Thermal Considerations and Package Mounting: The rated 650W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 200C. The thermal resistance between junctions and case mounting surface is 0.27 C/W. When installed, an additional thermal impedance of 0.05 C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint com- yyyy ;;;; yy ;; 3 1,4 8 2 Clamp ARF 450 Compliant layer Heat Sink The ceramic portion of the device between leads and mounting surface is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. pound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. An L-clamp, a compliant layer of plastic or rubber, and a 6-32 (M3.5) screw can provide the minimum 35 lb required mounting force. T = 4 in-lb. 050-4910 Rev C 12-2000 USA: EUROPE: 405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382 - 8028 FAX: (541) 388 -0364 Chemin de Magret Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 |
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