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| D TO-247 G S ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION (1-15MHz ) POWER MOS IV (R) N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications. * Specified 100 Volt, 13.56 MHz Characteristics: * Output Power = 200 Watts. * Gain = 22dB (Typ.) * Efficiency = 73% (Typ.) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case * Low Cost Common Source RF Package. * Very High Breakdown for Improved Ruggedness. * Low Thermal Resistance. * Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25C unless otherwise specified. ARF442/443 UNIT Volts 300 300 8 30 167 0.75 -55 to 150 300 Amps Volts Watts C/W C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 1 MIN TYP MAX UNIT Volts 300 6 250 1000 100 3.5 2 4.5 5 nA mhos Volts A VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (ID(ON) = 6.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 5.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-4506 Rev C DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 100V f = 1 MHz MIN TYP ARF442/443 MAX UNIT 730 100 33 900 140 50 pF FUNCTIONAL CHARACTERISTICS Symbol GPS1 1 GPS2 2 Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 30:1 Common Source Amplifier Power Gain Drain Efficiency Test Conditions VDD = 100V VGS = 0V Pout = 200W f = 13.56MHz VDD = 100V, Pout = 200W IDQ = 50mA, f = 13.56MHz MIN TYP MAX UNIT dB % 17 18.9 73 No Degradation in Output Power 22 65 dB % 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL 13.56 MHz, 400 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT Q1 L1 C1 75-480pF 0.5H T1 2:1 R1 10K .01F BFC1 T2 C3 .01F C4 C5 .01F C2 RF Input RF Output Q2 .01F RFC1 C6 C7 .01F .01F C8 C9 .01F C10 + .1F VDD = 100V 10F (100V) Parts List C1 = 75-480pF Compression Mica C2, C3, C4, C5, C6, C7 & C8 = .01F @ 200V, CK06 C9 = .1F @ 100V, CK06 C10 = 10F @ 100V Electrolytic R1 = 10K, 5%, 1/4W, Carbon Q1 = ARF442 Q2 = ARF443 L1 = 7.5 T of #18AWG, ID = .438", L = 0.5H BFC1 = Balanced DC Feed Choke; 7 T of #22 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. i = 125 RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. i = 2000 T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. i = 850 T2 = 1:1 Z Transmission Line Transformer, using 50 coax. * Coax = 22" of mini 50 PTFE coax, OD = .095" * A large 2-hole balun core was constructed by gluing two Fair-Rite #2643102002, i = 850 cores together. * The transformer is constructed by winding 4.5 turns of the coax around the center of the balun core. PCB = .062" G10 Epoxy Glass. 050-4506 Rev C ARF442/443 500 Performance of aTypical Push-Pull Power Amplifier (2-Devices) f = 13.56 MHz V = 100V DD RF POWER OUT (WATTS) 400 300 200 100 0 0 1 2 3 4 5 6 RF POWER IN (WATTS) Figure 1, RF Power Out vs RF Power In 1.2 7 8 9 10 Figure 2, RF Power Out vs RF Power In 16 TJ = -55C VDS = 30V 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) DS =V GS 1.1 12 TJ = +25C 8 TJ = +125C 1.0 0.9 4 TJ = +125C TJ = +25C 0 0.8 TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.7 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 3, Threshold Voltage vs Temperature 10 ID, DRAIN CURRENT (AMPERES) 5 re N) He (O S ion at y R D er B Op ited Lim 1.2 1.1 1.0 1 .5 TC =+25C TJ =+150C 0.9 0.8 .1 1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Maximum DC Safe Operating Area 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5, Breakdown Voltage vs Temperature 3,000 Ciss 1,000 C, CAPACITANCE (pF) 500 Coss Crss 100 50 10 .01 .05 .1 .5 1 5 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Capacitance vs. Drain-To-Source Voltage 50 100 050-4506 Rev C ARF442/443 TO-247AD Package Outline ARF442 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44E 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) GATE SOURCE DRAIN 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) ARF443 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44O 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) DRAIN SOURCE GATE 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) NOTE: The ARF442 and ARF443 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 050-4506 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388 -0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 |
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