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APTM50HM75SCTG Full bridge Series & SiC parallel diodes VDSS = 500V RDSon = 75m typ @ Tj = 25C ID = 46A @ Tc = 25C Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated * G4 S4 NTC1 0/VBUS NTC2 MOSFET Power Module VBUS CR1A CR3A Q1 CR1B CR3B Q3 G1 S1 CR2A OUT1 OUT2 CR4A G3 S3 Q2 CR2B CR4B Q4 G2 S2 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration * * * * G3 S3 G4 S4 OUT2 VBUS 0/VB US OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 500 46 34 184 30 90 357 46 50 2500 Unit V A V m W A mJ July, 2006 1-8 APTM50HM75SCTG - Rev 2 Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM50HM75SCTG All ratings @ Tj = 25C unless otherwise specified Symbol IDSS RDS(on) VGS(th) IGSS Electrical Characteristics Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Tj = 25C Tj = 125C Typ VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V 75 3 Max 100 500 90 5 100 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 46A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 46A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 46A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 46A, R G = 5 Min Typ 5590 1180 85 123 33 65 18 35 87 77 453 726 745 846 Max Unit pF nC ns J J Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=600V IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s Min 600 Tj = 25C Tj = 125C Tc = 85C Typ Max 250 500 Unit V A A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25C Tj = 125C Tj = 25C Tj = 125C 24 48 33 150 ns nC www.microsemi.com 2-8 APTM50HM75SCTG - Rev 2 July, 2006 Tj = 125C 30 1.1 1.4 0.9 1.15 V APTM50HM75SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=600V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 600 Typ 100 200 20 1.6 2.0 28 130 100 Max 400 2000 1.8 2.4 Unit V A A V nC pF IF = 20A, VR = 300V di/dt =800A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode 2500 -40 -40 -40 2.5 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Typ Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz Max 0.35 1.2 1.5 150 125 100 4.7 160 Unit C/W V C N.m g Unit k K Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature SP4 Package outline (dimensions in mm) www.microsemi.com 3-8 APTM50HM75SCTG - Rev 2 July, 2006 APTM50HM75SCTG ALL DIMENSIO NS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 4-8 APTM50HM75SCTG - Rev 2 July, 2006 APTM50HM75SCTG Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 0.9 0.7 0 0.00001 Low Voltage Output Characteristics 180 160 I D, Drain Current (A) 140 120 100 80 60 40 20 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A) Normalized to VGS=10V @ 23A VGS=10V VGS=10&15V Transfert Characteristics 120 I D, Drain Current (A) 8V 7.5V 7V 6.5V 6V 5.5V 100 80 60 40 20 0 VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle T J=25C TJ=125C T J=-55C 25 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 50 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 V GS=20V 20 40 60 80 100 25 www.microsemi.com 5-8 APTM50HM75SCTG - Rev 2 July, 2006 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (C) 150 APTM50HM75SCTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 VGS , Gate to Source Voltage (V) C, Capacitance (pF) Ciss Coss 1000 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area ON resistance vs Temperature VGS=10V ID=23A 100 limited by R DSonDSon limited by R 100s 10 Single pulse TJ =150C TC=25C 1 1ms 10ms 1 10 100 1000 VDS, Drain to Source Voltage (V) 10000 Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=46A 12 T =25C J V =250V DS 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) July, 2006 VDS=400V 1000 100 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 6-8 APTM50HM75SCTG - Rev 2 APTM50HM75SCTG Delay Times vs Current 100 80 60 40 20 0 10 20 30 40 50 60 I D, Drain Current (A) 70 VDS=333V RG=5 TJ=125C L=100H Rise and Fall times vs Current 120 100 t r and tf (ns) 80 60 40 20 0 10 20 30 40 50 60 70 I D, Drain Current (A) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 30 Eon VDS=333V ID=46A T J=125C L=100H VDS=333V RG=5 T J=125C L=100H td(off) t d(on) and td(off) (ns) tf td(on) tr Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 0.8 0.4 Eoff 0 10 20 30 40 50 60 70 I D, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 40 ID, Drain Current (A) Hard switching ZCS ZVS V DS=333V D=50% R G=5 T J=125C T C=75C VDS=333V RG=5 TJ=125C L=100H Eoff Eoff Eon 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 400 1000 100 T J=150C 10 T J=25C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 www.microsemi.com 7-8 APTM50HM75SCTG - Rev 2 APTM50HM75SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25C Reverse Characteristics 40 I F Forward Current (A) 400 IR Reverse Current (A) 35 30 25 20 15 10 5 0 0 0.5 1 350 300 250 200 150 100 50 0 200 300 T J=175C T J=75C T J=175C TJ=125C T J=125C T J=75C T J=25C 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 400 500 600 700 VR Reverse Voltage (V) 800 800 700 C, Capacitance (pF) 600 500 400 300 200 100 0 July, 2006 8-8 APTM50HM75SCTG - Rev 2 1 10 100 VR Reverse Voltage 1000 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com |
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