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APTM50H14FT3G
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 500V RDSon = 140m typ @ Tj = 25C ID = 26A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM50H14FT3G - Rev 1 July, 2006
Max ratings 500 26 18 105 30 168 208 35 30 1300
Unit V A V m W A
APTM50H14FT3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Tj = 25C Tj = 125C 140 3
VGS = 10V, ID = 13A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V
Max 100 500 168 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 26A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 26A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 26A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 26A, R G = 5
Min
Typ 3259 709 51 72 20 36 10 17 50 41 326 250 548 288
Max
Unit pF
nC
ns
J J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ 26 18
Max
Unit A
VGS = 0V, IS = - 26A IS = - 26A VR = 333V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C
1.3 15 250 525 1.6 6
V V/ns ns C
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APTM50H14FT3G - Rev 1 July, 2006
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 26A di/dt 700A/s VR VDSS Tj 150C
APTM50H14FT3G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.60 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTM50H14FT3G - Rev 1 July, 2006
17
28
APTM50H14FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 0.9 0.7 0.5
0 0.00001
Low Voltage Output Characteristics 100 I D, Drain Current (A) I D, Drain Current (A) 80 60 40 20 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to V GS=10V @ 13A V GS=10&15V 8V 7.5V 7V 6.5V 6V 5.5V
Transfert Characteristics
80 70 60 50 40 30 20 10 0
25
T J=25C T J=125C VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
TJ=-55C
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 30
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0
V GS=10V
25 20 15 10 5 0
VGS=20V
10
20
30
40
50
60
25
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
APTM50H14FT3G - Rev 1 July, 2006
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APTM50H14FT3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000 ID, Drain Current (A) ON resistance vs Temperature
VGS=10V ID=13A
1.1
1.0
0.9
0.8 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2
VGS (TH), Threshold Voltage (Normalized)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage
100
limited by RDSon
limited by R DSon
100s
10
Single pulse TJ =150C TC=25C 1
1ms 10ms
1
10 100 1000 VDS, Drain to Source Voltage (V)
100000 VGS , Gate to Source Voltage (V) C, Capacitance (pF)
10000
Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=26A 12 T =25C J V =250V
DS
Ciss Coss
10 8 6 4 2 0 0 20 40 60 Gate Charge (nC) 80 100
VDS=400V
1000
100
Crss
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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APTM50H14FT3G - Rev 1 July, 2006
APTM50H14FT3G
Delay Times vs Current 60 50 t d(on) and td(off) (ns)
VDS=333V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 80
VDS=333V RG=5 T J=125C L=100H
30 20 10 0 0
t r and tf (ns)
40
td(off)
60
tf
40
td(on)
20
tr
0 10 20 30 40 50 ID, Drain Current (A) 60 0 10 20 30 40 50 60 I D, Drain Current (A) Switching Energy vs Gate Resistance
Switching Energy vs Current
1.2
Switching Energy (mJ)
1.5
Switching Energy (mJ)
VDS=333V ID=26A T J=125C L=100H
1 0.8 0.6 0.4 0.2 0 0
VDS=333V RG=5 TJ=125C L=100H
Eon
Eoff
1
Eon 0.5 Eoff
Eoff
0 10 20 30 40 50 60 0 10 20 30 40 50
I D, Drain Current (A) Operating Frequency vs Drain Current
V DS=333V D=50% R G=5 T J=125C T C=75C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
500 Frequency (kHz) 400 300 200 100 0 5 10 15
Hard switching ZCS ZVS
IDR, Reverse Drain Current (A)
600
1000
100
T J=150C
10
T J=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APTM50H14FT3G - Rev 1 July, 2006
20
25
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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