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APTM20HM10F
Full - Bridge MOSFET Power Module
VDSS = 200V RDSon = 10mW max @ Tj = 25C ID = 175A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* *
OUT1 G1 S1 VBUS 0/VBUS G2 S2
* Benefits * * * *
S3 G3 OUT2
S4 G4
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 175 131 700 30 10 694 89 50 2500 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM20HM10F- Rev 1 May, 2004
Tc = 25C
APTM20HM10F
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375A
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Min 200 Tj = 25C Tj = 125C 3
Typ
Max 375 1500 10 5 150
Unit V A mW V nA
VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 150A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 150A RG = 2.5W Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5 Min Typ 13.7 4.36 0.2 224 86 94 28 56 81 99 926 910 1216 1062 J J ns Max Unit nF
nC
Source - Drain diode ratings and characteristics
Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 150A IS = -150A VR = 133V diS/dt = 200A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 2.14 5.8 Min Typ Max 175 131 1.3 8 220 420 Unit A V V/ns ns C
APTM20HM10F- Rev 1 May, 2004
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150C IS - 150A di/dt 700A/s
APT website - http://www.advancedpower.com
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APTM20HM10F
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.18 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
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APTM20HM10F- Rev 1 May, 2004
APTM20HM10F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 500
VGS=15&10V 9V
Thermal Impedance (C/W)
10
400 ID, Drain Current (A)
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
400 300 200 100 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 ID, Drain Current (A) 240
VGS=20V 7.5V 7V 6.5V 6V 5.5V
300
200
TJ=25C TJ=125C T J=-55C
100
0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (C) 150
VGS=10V
ID, DC Drain Current (A)
Normalized to VGS=10V @ 87.5A
APT website - http://www.advancedpower.com
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APTM20HM10F- Rev 1 May, 2004
APTM20HM10F
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1 ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
limited by RDSon
ON resistance vs Temperature
VGS=10V ID= 87.5A
1000
100s
100 1ms 10 Single pulse TJ=150C 10ms DC line
1
10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=150A 10 TJ=25C VDS=100V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC)
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
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APTM20HM10F- Rev 1 May, 2004
APTM20HM10F
Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 0 50 100 150 200 250 300 ID, Drain Current (A) Switching Energy vs Current
VDS=133V RG=2.5 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=2.5 TJ=125C L=100H
td(off) tr and tf (ns)
tf
120 100 80 60 40 20 0 0
tr
td(on)
50
100
150
200
250
300
ID, Drain Current (A) Switching Energy vs Gate Resistance
2.5 2 1.5 1 0.5 0 0 50 100 150 200 250 300
ID, Drain Current (A) Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A)
VDS=133V D=50% RG=2.5 TJ=125C
3 Switching Energy (mJ) 2.5 2 1.5 1 0 5 10 15 20 Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage 1000
VDS=133V ID=150A TJ=125C L=100H
Eon and Eoff (mJ)
VDS=133V RG=2.5 TJ=125C L=100H
Eon Eoff
Eoff
Eon
IDR, Reverse Drain Current (A)
350
100
TJ=150C TJ=25C
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM20HM10F- Rev 1 May, 2004

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