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APTGT75TDU60P
Triple Dual Common Source Trench + Field Stop IGBT(R) Power Module
C1 C3 C5 G1 G3 G5
VCES = 600V IC = 75A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
E5/E6
E1 E1/E2
E3 E3/E4
E5
E2
E4
E6
G2 C2
G4 C4
G6 C6
Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability
C1
C3
C5
G1 E1/E2 E1 E2 G2 E3/E4
G3 E3 E4 G4 E5/E6
G5 E5 E6 G6
C2
C4
C6
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Max ratings 600 100 75 140 20 250 150A @ 550V
Unit V A V W
May, 2005 1-5 APTGT75TDU60P - Rev 0,
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTGT75TDU60P
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 75A Tj = 150C VGE = VCE , IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 75A R G = 12 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 75A R G = 12
Min
Typ 4620 300 140 110 45 200 40 120 50 250 60 1.3 2.6
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=600V
50% duty cycle
IF = 75A VGE = 0V IF = 75A VR = 300V
di/dt =2000A/s
APT website - http://www.advancedpower.com
2-5
APTGT75TDU60P - Rev 0,
May, 2005
75 1.6 1.5 125 220 3.6 7.6
2 V ns C
APTGT75TDU60P
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.60 0.98 175 125 100 5 250 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
Package outline (dimensions in mm)
5 places (3:1)
APT website - http://www.advancedpower.com
3-5
APTGT75TDU60P - Rev 0,
May, 2005
APTGT75TDU60P
Typical Performance Curve
150 125
T J=125C
Output Characteristics (VGE =15V)
TJ=25C
Output Characteristics 150
T J = 150C VGE =19V
125
TJ=150C
IC (A)
100 75 50 25 0 0 0.5 1
T J=25C
100 IC (A) 75 50
VGE=13V VGE=15V
VGE =9V
25 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
150 125 100 75 50 25 0 5
Transfert Characteristics 5
T J=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 12 T J = 150C Eoff Eon
4 E (mJ) 3 2 1
IC (A)
T J=125C TJ =150C T J=25C
Er Eon
0 11 12 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175
Eon
6
7
8 9 VGE (V)
10
100
125
150
Switching Energy Losses vs Gate Resistance 10 8 E (mJ) 6
Eoff V CE = 300V V GE =15V I C = 75A T J = 150C
150 125 IC (A) 100 75 50
VGE =15V T J=150C RG=12
4 2 0 0
Eoff Eon Er
25 0 80 0
10
20 30 40 50 60 Gate Resistance (ohms)
70
100
200
300 400 V CE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.9 IGBT
0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
APT website - http://www.advancedpower.com
4-5
APTGT75TDU60P - Rev 0,
May, 2005
0.7
APTGT75TDU60P
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80
ZVS ZCS VCE=300V D=50% RG=12 TJ =150C
Forward Characteristic of diode 150 125 100 IC (A) 75 50 25
T J=25C T J=125C TJ =150C
Tc=85C
60 40 20 0 0 20 40 IC (A) 60 80 100
Hard switching
0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 1.2 Thermal Impedance (C/W)
Diode
1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10
0 0.00001
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT75TDU60P - Rev 0,
APT reserves the right to change, without notice, the specifications and information contained herein
May, 2005

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