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APTGT75TA120P Triple phase leg Trench IGBT(R) Power Module VBUS1 VBUS2 VBUS3 VCES = 1200V IC = 75A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control G1 G3 G5 E1 U E3 V E5 W G2 G4 G6 E2 0/VBUS1 E4 0/VBUS2 E6 0/VBUS3 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge Max ratings 1200 100 75 175 20 350 150A@1150V Unit V A V W September, 2004 1-5 APTGT75TA120P - Rev 0 VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 E1 E2 G2 0/VBUS 2 G3 E3 E4 G4 0/VBUS 3 G5 E5 E6 G6 U V W Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Reverse Bias Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com APTGT75TA120P All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES ICES VCE(on) VGE(th) IGES Test Conditions Min Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, IC = 5mA VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V 1200 Typ Max 5 2.1 6.5 500 Unit V mA V V nA 1.4 5.0 1.7 2.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 Min Typ 5340 280 240 260 30 420 70 285 50 520 90 7 8.1 Max Unit pF ns ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM VF Er Qrr Maximum Reverse Leakage Current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions VR=1200V IF = 75A VGE = 0V IF = 75A VR = 600V di/dt =825A/s IF = 75A VR = 600V di/dt =825A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 2.1 Unit V A V mJ C September, 2004 2-5 APTGT75TA120P - Rev 0 1.6 1.6 3 6 7.6 13.7 APT website - http://www.advancedpower.com APTGT75TA120P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.35 0.58 150 125 100 5 250 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M6 Package outline 5 places (3:1) APT website - http://www.advancedpower.com 3-5 APTGT75TA120P - Rev 0 September, 2004 APTGT75TA120P Typical Performance Curve 150 125 IC (A) Output Characteristics (VGE=15V) Output Characteristics 150 TJ = 125C T J=25C 125 TJ=125C VGE =17V V GE=13V VGE =15V V GE=9V 100 IC (A) 100 75 50 25 0 75 50 25 0 0 1 2 VCE (V) 3 4 0 1 2 V CE (V) 3 4 150 125 100 IC (A) 75 50 25 0 5 Transfert Characteristics 17.5 T J=25C T J=125C Energy losses vs Collector Current 15 12.5 E (mJ) 10 7.5 5 2.5 0 0 25 50 75 IC (A) Reverse Safe Operating Area 175 150 Eoff Er VCE = 600V VGE = 15V RG = 4.7 TJ = 125C Eoff Eon 6 7 8 9 VGE (V) 10 11 12 100 125 150 Switching Energy Losses vs Gate Resistance 16 14 12 E (mJ) 10 8 6 4 2 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 Er VCE = 600V VGE =15V IC = 75A TJ = 125C Eon 125 IC (A) 100 75 50 25 0 0 400 800 V CE (V) 1200 1600 V GE=15V T J=125C RG=4.7 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.7 0.5 0.3 IGBT rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGT75TA120P - Rev 0 September, 2004 0.9 APTGT75TA120P Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 20 40 60 IC (A) 80 100 120 Hard switching ZVS ZCS VCE=600V D=50% RG=4.7 TJ=125C Forward Characteristic of diode 150 125 100 IC (A) 75 50 25 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 TJ=125C TJ=25C Tc=75C maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 Diode Single Pulse 0.001 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT75TA120P - Rev 0 September, 2004 |
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