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APTGT50DU170T
Dual common source Trench + Field Stop IGBT(R) Power Module
C1 Q1 G1 C2
VCES = 1700V IC = 50A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
Q2 G2
E1
E2
NTC1
E
NTC2
G2 E2
C2
C1
E
C2
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
V W
Reverse Bias Safe Operating Area
100A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT50DU170T - Rev 0
May, 2005
Max ratings 1700 75 50 100 20 312
Unit V A
APTGT50DU170T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 50A R G = 10 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 50A R G = 10
Min
Typ 4400 180 150 370 40 650 180 400 50 800 300 16 15
Max
Unit pF
ns
ns
mJ
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1700V
50% duty cycle
IF = 50A IF = 50A VR = 900V di/dt =800A/s
50 1.8 1.9 385 490 14 23
2.2
V ns C
May, 2005
APT website - http://www.advancedpower.com
2-5
APTGT50DU170T - Rev 0
APTGT50DU170T
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.4 0.7 150 125 100 4.7 160
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
3400 -40 -40 -40 1.5
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT50DU170T - Rev 0
May, 2005
APTGT50DU170T
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 100 TJ = 125C 80 IC (A) 60 40 20 0
VGE =20V
100 90 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5
T J=25C
IC (A)
TJ =125C
VGE=13V VGE =15V V GE=9V
2 2.5 VCE (V)
3
3.5
4
0
1
2
3 V CE (V)
4
5
Transfert Characteristics 100 80 60 40 20 0 5 6 7 8 9 V GE (V) Switching Energy Losses vs Gate Resistance 50 40 E (mJ) 30 20 10
Er VCE = 900V VGE =15V IC = 50A TJ = 125C TJ =125C T J=25C
Energy losses vs Collector Current 50 40 E (mJ)
VCE = 900V VGE = 15V RG = 10 T J = 125C Eon
IC (A)
TJ=125C
30 20
Eoff
Er
Er
10 0 10 11 12 13 0 20 40 IC (A) Reverse Bias Safe Operating Area 125
Eon
60
80
100
100 IC (A) 75 50 25 0
VGE=15V TJ=125C RG =10
Eoff
0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80
0
400
800
1200
1600
2000
VCE (V)
0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.1 0.05 0.9 0.7 0.5 0.3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT
Single Pulse 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT50DU170T - Rev 0
May, 2005
APTGT50DU170T
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 30 25 20
ZVS ZCS VCE =900V D=50% RG=10 T J=125C T C=75C
Forward Characteristic of diode 100 90 80 70 IC (A) 60 50 40 30
T J=125C T J=25C
15 10 5 0 0 10 20 30 40 IC (A)
hard switching
T J=125C
20 10 0 50 60 70 80 0 0.5 1 1.5 VF (V) 2 2.5 3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.8 Thermal Impedance (C/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT50DU170T - Rev 0
May, 2005

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