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APTC80H15T3G
Full - Bridge
Super Junction MOSFET
VDSS = 800V RDSon = 150m max @ Tj = 25C ID = 28A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
11 22 19 Q2 23 8 Q4 7 10
Power Module
13 14 Q1 Q3
18
Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
26
4 3 29 15 30 31 R1 32 16
27
* * * *
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant Max ratings 800 28 21 110 30 150 277 17 0.5 670 Unit V A V m W A mJ
July, 2006 1-6 APTC80H15T3G - Rev 2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC80H15T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Typ
Tj = 25C Tj = 125C 2.1 3
VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V
Max 50 375 150 3.9 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125C VGS = 15V VBus = 533V ID = 28A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5
Min
Typ 4507 2092 108 180 22 90 10 13 83 35 486 278 850 342
Max
Unit pF
nC
ns
J J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ 28 21
Max
Unit A
VGS = 0V, IS = - 28A IS = - 28A VR = 400V diS/dt = 200A/s Tj = 25C Tj = 25C 550 30
1.2 6
V V/ns ns C
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2-6
APTC80H15T3G - Rev 2
July, 2006
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 28A di/dt 200A/s VR VDSS Tj 150C
APTC80H15T3G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.45 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-6
APTC80H15T3G - Rev 2
July, 2006
17
28
APTC80H15T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 40 I D, Drain Current (A) 50 60
VGS=20V
Thermal Impedance (C/W)
10
Transfert Characteristics 100
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
6V 5.5V 5V 4.5V 4V
ID, Drain Current (A)
6.5V
80 60 40 20 0 0
TJ =25C TJ =125C T J=-55C
1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 30 ID, DC Drain Current (A)
Normalized to V GS=10V @ 14A
VGS=10V
25 20 15 10 5 0 25 50 75 100 125 150
July, 2006
TC, Case Temperature (C)
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4-6
APTC80H15T3G - Rev 2
APTC80H15T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 14A
100
limited by RDSon
100s
10
100ms 1ms
1
Single pulse TJ =150C TC=25C 1 10 100 1000 VDS, Drain to Source Voltage (V)
0
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC)
July, 2006
VDS=640V ID=28A T J=25C V DS =160V VDS=400V
10000
Ciss
1000
Coss Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTC80H15T3G - Rev 2
APTC80H15T3G
Delay Times vs Current Rise and Fall times vs Current
100
t d(off) td(on) and td(off) (ns)
50 40
t r and tf (ns)
V DS=533V RG=2.5 T J=125C L=100H
tf
80 60 40 20 0 10 20 30 40 I D, Drain Current (A)
Switching Energy vs Current
30 20 10 0
VDS=533V RG=2.5 T J=125C L=100H
tr
t d(on)
50
10
20 30 40 I D, Drain Current (A)
50
Switching Energy vs Gate Resistance
1500 1200 900 600 300 0
Switching Energy (J)
Eon and Eoff (J)
VDS=533V RG=2.5 TJ=125C L=100H
2500 Eon 2000 1500 1000 500 0
V DS=533V ID=28A T J=125C L=100H
Eon Eoff
Eoff
Eon
10
20 30 40 I D, Drain Current (A)
50
0
5 10 15 20 Gate Resistance (Ohms)
25
Operating Frequency vs Drain Current
350
Frequency (kHz)
ZVS
300 250 200 150 100 50 0 6
Hard switching ZCS
VDS=533V D=50% RG=2.5 TJ=125C TC=75C
IDR , Reverse Drain Current (A)
400
Source to Drain Diode Forward Voltage 1000
100
T J=150C
10
T J=25C
1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V)
July, 2006 APTC80H15T3G - Rev 2
8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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