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800V 15A
APT8052BFLL APT8052SFLL
BFLL
0.520
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
D3PAK
TO-247
SFLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT8052BFLL_SFLL UNIT Volts Amps
800 15 60 30 40 298 2.38 -55 to 150 300 15 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.520 250 1000 100 3 5
(VGS = 10V, ID = 7.5A)
Ohms A nA Volts
7-2004 050-7059 Rev B
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT8052BFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 15A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 15A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 533V VGS = 15V ID = 15A, RG = 5 ID = 15A, RG = 5 RG = 1.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
2035 405 60 75 11 50 9 6 23 7 215 90 420 110
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
15 60 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -15A)
dv/ 5 dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -15A, di/dt = 100A/s) Reverse Recovery Charge (IS = -15A, di/dt = 100A/s) Peak Recovery Current (IS = -15A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
200 350 0.69 2.66 8 14
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.42 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.45
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 10.76mH, RG = 25, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID15A di/dt 700A/s VR 800 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5
0.9
0.7
0.5 Note:
PDM
7-2004
0.3 SINGLE PULSE 0.1 0.05 10-4 10-3 10-2
t1 t2
050-7059 Rev B
JC
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
Z
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
40 35 30 25 20 15 10 5 0 5.5V 5V 7V 6.5V VGS =15 &10 V
APT8052BFLL_SFLL
8V
RC MODEL Junction temp. (C) 0.164 Power (watts) 0.257 Case temperature. (C) 0.125F 0.00592F
ID, DRAIN CURRENT (AMPERES)
6V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 40 35
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
NORMALIZED TO = 10V @ I = 7.5A
D
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
30 25 20 15 10 5 0 TJ = +125C TJ = -55C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VGS=20V
0
16 14
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
12 10 8 6 4 2 0 25
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 7.5A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7059 Rev B
7-2004
Typical Performance Curves
60
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
7,000
APT8052BFLL_SFLL
Ciss
5
C, CAPACITANCE (pF)
10
100S
1,000 Coss
1 .5 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1mS 10mS
100 Crss
.1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 15A
100
12
VDS=100V
TJ =+150C TJ =+25C 10
8
VDS=250V
VDS=400V
4
20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 60 50 td(off)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 35 30 25 tf
V
DD G
td(on) and td(off) (ns)
40 30 20 10
V
DD G
= 533V
= 533V
R
= 5
tr and tf (ns)
T = 125C
J
20 15 10 5 0
R
= 5
T = 125C
J
L = 100H
L = 100H
tr
td(on) 0 5 15 20 25 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
700 600
SWITCHING ENERGY (J)
= 533V
15 20 25 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1000
V I
DD
5
10
= 533V
R
= 5
D J
= 15A
T = 125C
J
500 400 300 200 100 0
E ON includes diode reverse recovery.
SWITCHING ENERGY (J)
L = 100H
800
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
600 Eon 400
Eon
7-2004
Eoff
200
050-7059 Rev B
15 20 25 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
5
10
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90% 10% Gate Voltage TJ125C
APT8052BFLL_SFLL
td(off)
Gate Voltage
TJ125C
td(on)
Drain Current Drain Voltage 90%
tr
90% 5% 10% Switching Energy 5% Drain Voltage
tf
10% 0 Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7059 Rev B
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
7-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

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