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APT55M65JFLL
550V 63A
S G D
0.065
S
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
APT55M65JFLL
D G S
All Ratings: TC = 25C unless otherwise specified.
UNIT Volts Amps
550 63 252 30 40 595 4.76 -55 to 150 300 63 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
550 0.065 250 1000 100 3 5
(VGS = 10V, ID = 31.5A)
Ohms A nA Volts
7-2004 050-7227 Rev A
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT55M65JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 63A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 63A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 367V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 367V, VGS = 15V ID = 63A, RG = 5 ID = 63A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
9165 1700 80 205 55 105 23 16 55 10 1155 1510 1650 1500
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
63 256 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -63A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -63A, di/dt = 100A/s) Reverse Recovery Charge (IS = -63A, di/dt = 100A/s) Peak Recovery Current (IS = -63A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
300 600 2.6 10 17 34
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.21 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 1.61mH, RG = 25, Peak IL = 63A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ID-63A di/dt 700A/s VR 550V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.20
0.9 0.7
0.15
7-2004
0.10
0.5 0.3
Note:
PDM t1 t2
JC
050-7227 Rev A
Z
0.05 0.1 0 0.05 10-5 10-4 10-3 10-2 10-1 SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
200 180 160 140 120 100 80 60 40 20 0
APT55M65JFLL
VGS =15 & 10V 6.5V 6V
0.0492
0.0273F
5.5V
Power (watts)
0.142
0.469F
5V
0.0189 Case temperature. (C)
44.2F
4.5V 4V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
180 160
ID, DRAIN CURRENT (AMPERES)
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ 31.5A
1.30 1.20 VGS=10V 1.10 1.00 0.90 0.80 VGS=20V
140 120 100 80 60 40 20 0 TJ = -55C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
70 60 50 40 30 20 10 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85
40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
20
ID, DRAIN CURRENT (AMPERES)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
= 31.5A
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
V
GS
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7227 Rev A
7-2004
252
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
30,000 10,000
C, CAPACITANCE (pF)
APT55M65JFLL
Ciss
100 50 100S
1,000
Coss
10
1mS 10mS
100
Crss
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 63A
IDR, REVERSE DRAIN CURRENT (AMPERES)
1 10 100 550 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
1
TC =+25C TJ =+150C SINGLE PULSE
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 300
10
12
100
VDS= 110V VDS= 275V
TJ =+150C TJ =+25C
8
VDS= 440V
10
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 180 160 140 td(off)
V = 367V
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 180 160 140 120
V
DD G
1
= 367V
R
= 5
T = 125C
J
L = 100H
td(on) and td(off) (ns)
tf
120 100 80 60 40 20 0 10
DD G
R
= 5
tr and tf (ns)
T = 125C
J
100 80 60 40 20 tr
L = 100H
td(on)
70 90 110 130 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
30
50
70 90 110 130 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 6,000 5,000
SWITCHING ENERGY (J)
V I
DD
0 10
30
50
4500 4000
SWITCHING ENERGY (J)
= 367V
D J
= 63A
3500 3000 2500 2000 1500 1000 500 0 10 30 Eoff 50 Eon
V
DD G
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
4,000 3,000
Eon 2,000 1,000 0
= 367V
7-2004
R
= 5
T = 125C
J
L = 100H EON includes diode reverse recovery.
050-7227 Rev A
70 90 110 130 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
Gate Voltage TJ125C 90%
APT55M65JFLL
10%
Gate Voltage
T 125C J
td(on) tr
90% Drain Current
td(off)
90% Drain Voltage
tf
5% Switching Energy 10% 5% Drain Voltage Switching Energy 10% 0 Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7227 Rev A
7-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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